naa a22 4500 510801897 CHVBK 20180411083359.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-013-2590-3 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2590-3 High-Temperature Performance of Stacked Silicon Nanowires for Thermoelectric Power Generation [Elektronische Daten] [Andrej Stranz, Andreas Waag, Erwin Peiner] Deep reactive-ion etching at cryogenic temperatures (cryo-DRIE) has been used to produce arrays of silicon nanowires (NWs) for thermoelectric (TE) power generation devices. Using cryo-DRIE, we were able to fabricate NWs of large aspect ratios (up to 32) using a photoresist mask. Roughening of the NW sidewalls occurred, which has been recognized as beneficial for low thermal conductivity. Generated NWs, which were 7μm in length and 220nm to 270nm in diameter, were robust enough to be stacked with a bulk silicon chip as a common top contact to the NWs. Mechanical support of the NW array, which can be created by filling the free space between the NWs using silicon oxide or polyimide, was not required. The Seebeck voltage, measured across multiple stacks of up to 16 bulk silicon dies, revealed negligible thermal interface resistance. With stacked silicon NWs, we observed Seebeck voltages that were an order of magnitude higher than those observed for bulk silicon. Degradation of the TE performance of silicon NWs was not observed for temperatures up to 470°C and temperature gradients up to 170K. TMS, 2013 Silicon thermoelectrics nationallicence nanowire array nationallicence roughness nationallicence thermal conductivity nationallicence Seebeck coefficient nationallicence Stranz Andrej Institute of Semiconductor Technology, TU Braunschweig, University of Technology, Brunswick, Germany aut Waag Andreas Institute of Semiconductor Technology, TU Braunschweig, University of Technology, Brunswick, Germany aut Peiner Erwin Institute of Semiconductor Technology, TU Braunschweig, University of Technology, Brunswick, Germany aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2233-2238 0361-5235 42:7<2233 2013 42 11664 https://doi.org/10.1007/s11664-013-2590-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2590-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Stranz Andrej Institute of Semiconductor Technology, TU Braunschweig, University of Technology, Brunswick, Germany aut NATIONALLICENCE 700 1- Waag Andreas Institute of Semiconductor Technology, TU Braunschweig, University of Technology, Brunswick, Germany aut NATIONALLICENCE 700 1- Peiner Erwin Institute of Semiconductor Technology, TU Braunschweig, University of Technology, Brunswick, Germany aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2233-2238 0361-5235 42:7<2233 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer