<?xml version="1.0" encoding="UTF-8"?>
<collection xmlns="http://www.loc.gov/MARC21/slim">
 <record>
  <leader>     naa a22        4500</leader>
  <controlfield tag="001">510801943</controlfield>
  <controlfield tag="003">CHVBK</controlfield>
  <controlfield tag="005">20180411092758.0</controlfield>
  <controlfield tag="007">cr unu---uuuuu</controlfield>
  <controlfield tag="008">180411e20130701xx      s     000 0 eng  </controlfield>
  <datafield tag="024" ind1="7" ind2="0">
   <subfield code="a">10.1007/s11664-012-2418-6</subfield>
   <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="035" ind1=" " ind2=" ">
   <subfield code="a">(NATIONALLICENCE)springer-10.1007/s11664-012-2418-6</subfield>
  </datafield>
  <datafield tag="245" ind1="0" ind2="0">
   <subfield code="a">Crystallographic, Thermoelectric, and Mechanical Properties of Polycrystalline Ba8Al x Si46− x Clathrates</subfield>
   <subfield code="h">[Elektronische Daten]</subfield>
   <subfield code="c">[Hiroaki Anno, Masahiro Hokazono, Ritsuko Shirataki, Yuko Nagami]</subfield>
  </datafield>
  <datafield tag="520" ind1="3" ind2=" ">
   <subfield code="a">The Al content dependence of crystallographic, thermoelectric, and mechanical properties is reported for polycrystalline Ba8Al x Si46−x (nominal x=15 to 17) clathrates prepared by combining arc melting and spark plasma sintering methods. The elastic constants and the coefficient of thermal expansion (CTE), which are also important properties for designing thermoelectric devices, are presented. Powder x-ray diffraction, scanning electron microscopy, and energy-dispersive x-ray spectroscopy (EDX) indicate that the typeI clathrate is the major phase of the samples but impurity phases (mainly BaAl2Si2, Si, and Al) are included in the samples with high Al contents. The actual Al content x determined by EDX ranges from approximately 14 to 15. The absolute value of the Seebeck coefficient increases and the electrical conductivity decreases as the Al content increases. The changes in Seebeck coefficient and electrical conductivity are explained in terms of the dependence of the carrier concentration on the Al content. The elastic constants and the CTE of the samples depend weakly on the Al content. Some of the properties are compared with reported data of single crystals of Ba8Al16Ge30, Ba8Ga16Ge30, Sr8Ga16Ge30, silicon, and germanium as standard references. The effective mass, Hall carrier mobility, and lattice thermal conductivity, which govern the transport properties, are determined to be ~ 2.4m 0, ~ 7cm2V−1s−1, and ~ 1.3Wm−1K−1, respectively, for actual Al content x of about 14.77. The thermoelectric figure of merit ZT is estimated to be about 0.35 at 900K for actual Al content x of about 14.77.</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
   <subfield code="a">TMS, 2013</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">Clathrate</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">Ba8Al x Si46− x</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">thermoelectric properties</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">coefficient of thermal expansion</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">elastic modulus</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">elastic constant</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Anno</subfield>
   <subfield code="D">Hiroaki</subfield>
   <subfield code="u">Department of Electrical Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Yamaguchi, Japan</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Hokazono</subfield>
   <subfield code="D">Masahiro</subfield>
   <subfield code="u">Department of Electrical Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Yamaguchi, Japan</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Shirataki</subfield>
   <subfield code="D">Ritsuko</subfield>
   <subfield code="u">Department of Electrical Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Yamaguchi, Japan</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Nagami</subfield>
   <subfield code="D">Yuko</subfield>
   <subfield code="u">Department of Electrical Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Yamaguchi, Japan</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="773" ind1="0" ind2=" ">
   <subfield code="t">Journal of Electronic Materials</subfield>
   <subfield code="d">Springer US; http://www.springer-ny.com</subfield>
   <subfield code="g">42/7(2013-07-01), 2326-2336</subfield>
   <subfield code="x">0361-5235</subfield>
   <subfield code="q">42:7&lt;2326</subfield>
   <subfield code="1">2013</subfield>
   <subfield code="2">42</subfield>
   <subfield code="o">11664</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2="0">
   <subfield code="u">https://doi.org/10.1007/s11664-012-2418-6</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="908" ind1=" " ind2=" ">
   <subfield code="D">1</subfield>
   <subfield code="a">research-article</subfield>
   <subfield code="2">jats</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">856</subfield>
   <subfield code="E">40</subfield>
   <subfield code="u">https://doi.org/10.1007/s11664-012-2418-6</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Anno</subfield>
   <subfield code="D">Hiroaki</subfield>
   <subfield code="u">Department of Electrical Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Yamaguchi, Japan</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Hokazono</subfield>
   <subfield code="D">Masahiro</subfield>
   <subfield code="u">Department of Electrical Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Yamaguchi, Japan</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Shirataki</subfield>
   <subfield code="D">Ritsuko</subfield>
   <subfield code="u">Department of Electrical Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Yamaguchi, Japan</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Nagami</subfield>
   <subfield code="D">Yuko</subfield>
   <subfield code="u">Department of Electrical Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Yamaguchi, Japan</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">773</subfield>
   <subfield code="E">0-</subfield>
   <subfield code="t">Journal of Electronic Materials</subfield>
   <subfield code="d">Springer US; http://www.springer-ny.com</subfield>
   <subfield code="g">42/7(2013-07-01), 2326-2336</subfield>
   <subfield code="x">0361-5235</subfield>
   <subfield code="q">42:7&lt;2326</subfield>
   <subfield code="1">2013</subfield>
   <subfield code="2">42</subfield>
   <subfield code="o">11664</subfield>
  </datafield>
  <datafield tag="900" ind1=" " ind2="7">
   <subfield code="a">Metadata rights reserved</subfield>
   <subfield code="b">Springer special CC-BY-NC licence</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="986" ind1=" " ind2=" ">
   <subfield code="a">SWISSBIB</subfield>
   <subfield code="b">510363342</subfield>
  </datafield>
  <datafield tag="898" ind1=" " ind2=" ">
   <subfield code="a">BK010053</subfield>
   <subfield code="b">XK010053</subfield>
   <subfield code="c">XK010000</subfield>
  </datafield>
  <datafield tag="949" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="F">NATIONALLICENCE</subfield>
   <subfield code="b">NL-springer</subfield>
  </datafield>
 </record>
</collection>
