naa a22 4500 510802044 CHVBK 20180411083359.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2416-8 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2416-8 The Effect of Adding Nano-Bi2Te3 on Properties of GeTe-Based Thermoelectric Material [Elektronische Daten] [Lili Zhang, Wei Wang, Baoguo Ren, Jinjuan Guo] The efficient thermoelectric materials (GeTe)0.85−x (Mn0.6Sn0.4Te)0.15(Bi2Te3) x (0≤x≤0.05), in which Bi2Te3 is nanopowder, were prepared by hot pressing. The effect of adding neutral nano-Bi2Te3 content on the thermoelectric properties of germanium telluride was investigated. With increasing x, the thermal conductivity of the prepared samples decreased significantly and the Seebeck coefficient declined slightly, while there was no obvious change in electrical conductivity. In both electrical conductivity and Seebeck coefficient curves at different x values, there are inflection points around 600K. The maximum dimensionless figure of merit ZT of the prepared materials is 1.54, attained in the temperature range from 700K to 750K for x=0.03. The x-ray diffraction (XRD) pattern shows that Bi2Te3 has been alloyed into the GeTe-MnTe-SnTe alloy, which is consistent with the high-resolution scanning electron microscopy (HRSEM) images. Adding nano-Bi2Te3 to GeTe-based materials could also increase their performance stability at high temperature as a result of decreasing the phase-transition temperature T c. TMS, 2013 GeTe-based materials nationallicence nano-Bi2Te3 nationallicence dimensionless figure of merit nationallicence thermal conductivity nationallicence phase-transition temperature nationallicence Zhang Lili Tianjin University, 300072, Tianjin, China aut Wang Wei Tianjin University, 300072, Tianjin, China aut Ren Baoguo Tianjin Institute of Power Sources, 300384, Tianjin, China aut Guo Jinjuan Tianjin Institute of Power Sources, 300384, Tianjin, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1303-1306 0361-5235 42:7<1303 2013 42 11664 https://doi.org/10.1007/s11664-012-2416-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2416-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zhang Lili Tianjin University, 300072, Tianjin, China aut NATIONALLICENCE 700 1- Wang Wei Tianjin University, 300072, Tianjin, China aut NATIONALLICENCE 700 1- Ren Baoguo Tianjin Institute of Power Sources, 300384, Tianjin, China aut NATIONALLICENCE 700 1- Guo Jinjuan Tianjin Institute of Power Sources, 300384, Tianjin, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1303-1306 0361-5235 42:7<1303 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer