naa a22 4500 510802109 CHVBK 20180411083400.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2290-4 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2290-4 Thermoelectric Properties of Indium-Added Skutterudites In x Co4Sb12 [Elektronische Daten] [Guanghe Li, Ken Kurosaki, Yuji Ohishi, Hiroaki Muta, Shinsuke Yamanaka] The high-temperature thermoelectric properties of In x Co4Sb12 (0.05≤x≤ 0.40) skutterudite compounds were investigated in this study. The phase states of the samples were identified by x-ray diffraction analysis and field-emission scanning electron microscopy at room temperature. InSb and CoSb2 were found as secondary phases in samples with x=0.10 to 0.40. The filling limit of In into the CoSb3 cages of In x Co4Sb12 was in the range 0.05< x<0.10. The electrical resistivity, Seebeck coefficient, and thermal conductivity of the In x Co4Sb12 samples were measured from room temperature to 773K. The Seebeck coefficient of all samples was negative. Reduction of the thermal conductivity by In addition resulted in a high thermoelectric figure of merit (ZT) of 0.67 for In0.35Co4Sb12 at 600K. TMS, 2012 Skutterudite nationallicence thermoelectric nationallicence Seebeck coefficient nationallicence electrical resistivity nationallicence thermal conductivity nationallicence Li Guanghe Graduate School of Engineering, Osaka University, 565-0871, Suita, Japan aut Kurosaki Ken Graduate School of Engineering, Osaka University, 565-0871, Suita, Japan aut Ohishi Yuji Graduate School of Engineering, Osaka University, 565-0871, Suita, Japan aut Muta Hiroaki Graduate School of Engineering, Osaka University, 565-0871, Suita, Japan aut Yamanaka Shinsuke Graduate School of Engineering, Osaka University, 565-0871, Suita, Japan aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1463-1468 0361-5235 42:7<1463 2013 42 11664 https://doi.org/10.1007/s11664-012-2290-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2290-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Li Guanghe Graduate School of Engineering, Osaka University, 565-0871, Suita, Japan aut NATIONALLICENCE 700 1- Kurosaki Ken Graduate School of Engineering, Osaka University, 565-0871, Suita, Japan aut NATIONALLICENCE 700 1- Ohishi Yuji Graduate School of Engineering, Osaka University, 565-0871, Suita, Japan aut NATIONALLICENCE 700 1- Muta Hiroaki Graduate School of Engineering, Osaka University, 565-0871, Suita, Japan aut NATIONALLICENCE 700 1- Yamanaka Shinsuke Graduate School of Engineering, Osaka University, 565-0871, Suita, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1463-1468 0361-5235 42:7<1463 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer