naa a22 4500 510802125 CHVBK 20180411083400.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-013-2508-0 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2508-0 Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900K [Elektronische Daten] [A. Stranz, J. Kähler, A. Waag, E. Peiner] Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined. TMS, 2013 Silicon nationallicence thermoelectric nationallicence material properties nationallicence Seebeck coefficient nationallicence Stranz A. Institute of Semiconductor Technology, TU Braunschweig University of Technology, Braunschweig, Germany aut Kähler J. Institute of Semiconductor Technology, TU Braunschweig University of Technology, Braunschweig, Germany aut Waag A. Institute of Semiconductor Technology, TU Braunschweig University of Technology, Braunschweig, Germany aut Peiner E. Institute of Semiconductor Technology, TU Braunschweig University of Technology, Braunschweig, Germany aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2381-2387 0361-5235 42:7<2381 2013 42 11664 https://doi.org/10.1007/s11664-013-2508-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2508-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Stranz A. Institute of Semiconductor Technology, TU Braunschweig University of Technology, Braunschweig, Germany aut NATIONALLICENCE 700 1- Kähler J. Institute of Semiconductor Technology, TU Braunschweig University of Technology, Braunschweig, Germany aut NATIONALLICENCE 700 1- Waag A. Institute of Semiconductor Technology, TU Braunschweig University of Technology, Braunschweig, Germany aut NATIONALLICENCE 700 1- Peiner E. Institute of Semiconductor Technology, TU Braunschweig University of Technology, Braunschweig, Germany aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2381-2387 0361-5235 42:7<2381 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer