naa a22 4500 510802184 CHVBK 20180411083400.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-013-2565-4 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2565-4 Composition-Dependent Thermoelectric Properties of n -Type Bi2Te2.7Se0.3 Doped with In4Se3 [Elektronische Daten] [Ju-Hyuk Yim, Seung-Hyub Baek, Hyun-Yong Shin, Dow Hyun, Jin-Sang Kim] We present the effects of In4Se3 addition on thermoelectric properties of n-type Bi2Te2.7Se0.3. In this study, polycrystalline (In4Se3) x -(Bi2Te2.7Se0.3)1−x pellets were prepared by mechanical alloying followed by spark plasma sintering (SPS). The thermoelectric properties such as Seebeck coefficient and electrical and thermal conductivities were measured in the temperature range of 300K to 500K. Addition of In4Se3 into Bi2Te2.7Se0.3 resulted in segregation of In4Se3 phase within Bi2Te2.7Se0.3 matrix. The Seebeck coefficient of the (In4Se3) x -(Bi2Te2.7Se0.3)1−x samples exhibited lower values compared with that of pure Bi2Te2.7Se0.3 phase. This reduction of Seebeck coefficient in n-type (In4Se3) x -(Bi2Te2.7Se0.3)1−x is attributed to the formation of unwanted p-type phases by interdiffusion through the interface between (In4Se3) x and (Bi2Te2.7Se0.3)1−x as well as consequently formed Te-deficient matrix. However, the decrease in electrical resistivity and thermal conductivity with addition of In4Se3 leads to an enhanced thermoelectric figure of merit (ZT) at a temperature range over 450K: a maximum ZT of 1.0 is achieved for the n-type (In4Se3)0.03-(Bi2Te2.7Se0.3)0.97 sample at 500K. TMS, 2013 Bi2Te3 nationallicence thermoelectric nationallicence nanostructure nationallicence In4Se3 nationallicence Yim Ju-Hyuk Electronic Materials Center, Korea Institute of Science and Technology, 136-791, Seoul, South Korea aut Baek Seung-Hyub Electronic Materials Center, Korea Institute of Science and Technology, 136-791, Seoul, South Korea aut Shin Hyun-Yong Department of Electronics Engineering, Namseoul University, 331-707, Cheonahn-si, Choongnam, South Korea aut Hyun Dow Electronic Materials Center, Korea Institute of Science and Technology, 136-791, Seoul, South Korea aut Kim Jin-Sang Electronic Materials Center, Korea Institute of Science and Technology, 136-791, Seoul, South Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2178-2183 0361-5235 42:7<2178 2013 42 11664 https://doi.org/10.1007/s11664-013-2565-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2565-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yim Ju-Hyuk Electronic Materials Center, Korea Institute of Science and Technology, 136-791, Seoul, South Korea aut NATIONALLICENCE 700 1- Baek Seung-Hyub Electronic Materials Center, Korea Institute of Science and Technology, 136-791, Seoul, South Korea aut NATIONALLICENCE 700 1- Shin Hyun-Yong Department of Electronics Engineering, Namseoul University, 331-707, Cheonahn-si, Choongnam, South Korea aut NATIONALLICENCE 700 1- Hyun Dow Electronic Materials Center, Korea Institute of Science and Technology, 136-791, Seoul, South Korea aut NATIONALLICENCE 700 1- Kim Jin-Sang Electronic Materials Center, Korea Institute of Science and Technology, 136-791, Seoul, South Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2178-2183 0361-5235 42:7<2178 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer