naa a22 4500 510802249 CHVBK 20180411083400.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2368-z doi (NATIONALLICENCE)springer-10.1007/s11664-012-2368-z Thermoelectric Properties of Polyaniline Films with Different Doping Concentrations of (±)-10-Camphorsulfonic Acid [Elektronische Daten] [Hiroaki Anno, Masahiro Hokazono, Fumio Akagi, Makoto Hojo, Naoki Toshima] The temperature dependence of the thermoelectric properties was investigated for polyaniline (PANI) films doped with different concentrations of (±)-10-camphorsulfonic acid (CSA) with molar ratio x of CSA to two phenyl-nitrogen units of x=1 to 0.2. All PANI-CSA films exhibit p-type conduction. The temperature dependence of the electrical conductivity of the films with low CSA concentrations is consistent with a transport mechanism of variable-range hopping. On the other hand, the Seebeck coefficient above room temperature shows a linear increase with temperature, attributed to the metallic nature of PANI-CSA. As the CSA concentration decreases, the absolute value of the Seebeck coefficient increases while the electrical conductivity extremely decreases, probably due to the changes not only in the carrier concentration but also in the degree of structural disorder. The power factor increases monotonically with increasing CSA concentration toward x=1 (the maximum limit). The thermal conductivity value of CSA-PANI film with x=1 is as low as about 0.20Wm−1K−1 in the through-plane direction and about 0.67Wm−1K−1 in the in-plane direction. The thermoelectric figure of merit ZT in the in-plane direction is estimated to be approximately 1×10−3 for x=1. TMS, 2012 Conducting polymer nationallicence polyaniline nationallicence doping concentration nationallicence variable-range hopping nationallicence thermoelectric properties nationallicence anisotropy nationallicence Anno Hiroaki Department of Electrical Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Japan aut Hokazono Masahiro Department of Electrical Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Japan aut Akagi Fumio Department of Applied Chemistry, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Japan aut Hojo Makoto Department of Applied Chemistry, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Japan aut Toshima Naoki Department of Applied Chemistry, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Japan aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1346-1351 0361-5235 42:7<1346 2013 42 11664 https://doi.org/10.1007/s11664-012-2368-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2368-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Anno Hiroaki Department of Electrical Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Japan aut NATIONALLICENCE 700 1- Hokazono Masahiro Department of Electrical Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Japan aut NATIONALLICENCE 700 1- Akagi Fumio Department of Applied Chemistry, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Japan aut NATIONALLICENCE 700 1- Hojo Makoto Department of Applied Chemistry, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Japan aut NATIONALLICENCE 700 1- Toshima Naoki Department of Applied Chemistry, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, 756-0884, Sanyoonoda, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1346-1351 0361-5235 42:7<1346 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer