naa a22 4500 510802273 CHVBK 20180411083400.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-013-2478-2 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2478-2 Titanium Disilicide as High-Temperature Contact Material for Thermoelectric Generators [Elektronische Daten] [F. Assion, M. Schönhoff, U. Hilleringmann] Thermoelectric devices can be used to capture electric power from waste heat in a variety of applications. The theoretical efficiency rises with the temperature difference across the thermoelectric generator (TEG). Therefore, we have investigated contact materials to maximize the thermal stability of a TEG. A promising candidate is titanium disilicide (TiSi2), which has been well known as a contact material in silicon technology for some time, having low resistivity and thermal stability up to 1150K. A demonstrator using highly doped silicon as the thermoelectric material has been integrated. A p- and an n-type wafer were oxidized and bonded. After cutting the wafer into pieces, a 200-nm-thick titanium layer was sputtered onto the edges. After a 750°C rapid thermal annealing step, the TEG legs were connected by a highly conductive TiSi2 layer. A TEG with 12 thermal couples was integrated, and its joint resistance was found to be 4.2Ω. Hence, we have successfully demonstrated a functional high-temperature contact for TEGs up to at least 900K. Nevertheless, the actual thermal stability will be even higher. The process could be transfered to other substrates by using amorphous silicon deposited by plasma-enhanced chemical vapor deposition. TMS, 2013 High temperature nationallicence TiSi2 nationallicence thermoelectric module nationallicence fabrication nationallicence contacts nationallicence Assion F. Institute for Electrical Engineering and Information Technology, University of Paderborn, 33098, Paderborn, Germany aut Schönhoff M. Institute for Electrical Engineering and Information Technology, University of Paderborn, 33098, Paderborn, Germany aut Hilleringmann U. Institute for Electrical Engineering and Information Technology, University of Paderborn, 33098, Paderborn, Germany aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1932-1935 0361-5235 42:7<1932 2013 42 11664 https://doi.org/10.1007/s11664-013-2478-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2478-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Assion F. Institute for Electrical Engineering and Information Technology, University of Paderborn, 33098, Paderborn, Germany aut NATIONALLICENCE 700 1- Schönhoff M. Institute for Electrical Engineering and Information Technology, University of Paderborn, 33098, Paderborn, Germany aut NATIONALLICENCE 700 1- Hilleringmann U. Institute for Electrical Engineering and Information Technology, University of Paderborn, 33098, Paderborn, Germany aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1932-1935 0361-5235 42:7<1932 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer