naa a22 4500 510802346 CHVBK 20180411083401.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2448-0 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2448-0 Development of a Measurement System for the Figure of Merit in the High-Temperature Region [Elektronische Daten] [H. Iwasaki, T. Yamamoto, H. Kim, G. Nakamoto] New equipment has been developed for evaluating the figure of merit, ZT, on the basis of the Harman method in the temperature range between room temperature and 650K. In this temperature range, the sample holder in the vacuum chamber has a different construction as compared with the sample holder constructed for the temperature range below room temperature. Several issues that need to be considered, such as compensation for the thermal radiation effect, suppression of heat leakage from the lead wires, and the setup method for the lead wires on the sample, are examined in the considered temperature region. Evaluations of ZT are successfully made for typical thermoelectric materials, (Bi,Sb)2Te3 and CeFe3CoSb12. We then demonstrate that the influence of thermal radiation between the high- and low-temperature edges of the sample induced by the Peltier effect on the estimated value of ZT is negligible at around 600K. Furthermore, the change in the thermoelectric properties due to repetition of the thermal cycle is studied, and a typical hysteresis behavior is observed in the considered thermoelectric materials. It is revealed that heating the sample to a high temperature causes a change in its thermoelectric properties, which one must take into account for practical applications of thermoelectric materials. TMS, 2013 Thermoelectric material nationallicence Harman method nationallicence figure of merit nationallicence high temperature nationallicence Iwasaki H. Center for Nano Materials Technology, JAIST, Asahidai 1-1, 923-1292, Nomi, Japan aut Yamamoto T. School of Materials Science, JAIST, Asahidai 1-1, 923-1292, Nomi, Japan aut Kim H. School of Materials Science, JAIST, Asahidai 1-1, 923-1292, Nomi, Japan aut Nakamoto G. School of Materials Science, JAIST, Asahidai 1-1, 923-1292, Nomi, Japan aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1840-1845 0361-5235 42:7<1840 2013 42 11664 https://doi.org/10.1007/s11664-012-2448-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2448-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Iwasaki H. Center for Nano Materials Technology, JAIST, Asahidai 1-1, 923-1292, Nomi, Japan aut NATIONALLICENCE 700 1- Yamamoto T. School of Materials Science, JAIST, Asahidai 1-1, 923-1292, Nomi, Japan aut NATIONALLICENCE 700 1- Kim H. School of Materials Science, JAIST, Asahidai 1-1, 923-1292, Nomi, Japan aut NATIONALLICENCE 700 1- Nakamoto G. School of Materials Science, JAIST, Asahidai 1-1, 923-1292, Nomi, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1840-1845 0361-5235 42:7<1840 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer