naa a22 4500 510802494 CHVBK 20180411083401.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2265-5 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2265-5 Effects of Ge Dopant on Thermoelectric Properties of Barium and Indium Double-Filled p -Type Skutterudites [Elektronische Daten] [Jian Yu, Wen-Yu Zhao, Bing Lei, Ding-Guo Tang, Qing-Jie Zhang] A series of Ge-doped and (Ba,In) double-filled p-type skutterudite materials with nominal composition Ba0.3In0.2FeCo3Sb12−x Ge x (x=0 to 0.4, Δx=0.1) have been prepared by melting, quenching, annealing, and spark plasma sintering methods. The effects of Ge dopant on the phase composition, microstructure, and thermoelectric properties of these materials were investigated in this work. A single-phase skutterudite material was obtained in the samples with 0<x≤0.2, and trace Fe3Ge2 was detected in the samples with x≥0.3. The electrical conductivity increased and Seebeck coefficient decreased with increasing x in the range of 0 to 0.2, while the inverse behaviors of electrical conductivity and Seebeck coefficient were observed in the samples with x≥0.3. The variations of electrical conductivity and Seebeck coefficient are attributed to the significant increase in the carrier concentration in the x range of 0 to 0.2 and the intensive impact of Fe3Ge2 when x≥0.3. The lattice thermal conductivity of all the Ge-doped samples was considerably reduced as compared with the undoped Ba0.3In0.2FeCo3Sb12 sample, and the lowest value of lattice thermal conductivity of the Ba0.3In0.2FeCo3Sb11.8Ge0.2 sample reached 1.0Wm−1K−1 at 700K. The highest ZT value of 0.54 was obtained at 800K for the Ba0.3In0.2FeCo3Sb11.7Ge0.3 sample, increased by 10% as compared with that of Ba0.3In0.2FeCo3Sb12. TMS, 2012 Filled skutterudite nationallicence p -type conduction nationallicence Ge dopant nationallicence thermoelectric properties nationallicence Yu Jian State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut Zhao Wen-Yu State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut Lei Bing State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut Tang Ding-Guo State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut Zhang Qing-Jie State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1400-1405 0361-5235 42:7<1400 2013 42 11664 https://doi.org/10.1007/s11664-012-2265-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2265-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yu Jian State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut NATIONALLICENCE 700 1- Zhao Wen-Yu State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut NATIONALLICENCE 700 1- Lei Bing State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut NATIONALLICENCE 700 1- Tang Ding-Guo State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut NATIONALLICENCE 700 1- Zhang Qing-Jie State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1400-1405 0361-5235 42:7<1400 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer