naa a22 4500 510802508 CHVBK 20180411083401.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-013-2490-6 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2490-6 Thermal Instability of β-Zn4Sb3: Insights from Transport and Structural Measurements [Elektronische Daten] [T. Dasgupta, H. Yin, J. de Boor, C. Stiewe, B. Iversen, E. Müller] β-Zn4Sb3 exhibits poor thermal stability, with zinc-rich specimens recently shown to be more stable. In this work, temperature-dependent transport measurements [Seebeck coefficient (S) and electrical conductivity (σ)] between room temperature (RT) and 525K were carried out on a zinc-poor specimen. The sequentially measured S and σ data in the same measurement cycle show sharp changes in their absolute values between 450K and 500K during the heating cycle, which is not retraced back during cooling. A repeat measurement carried out on the specimen after ~1month again shows the sharp changes in the absolute values between 450K and 500K, indicating reversibility of the process. Temperature-dependent synchrotron measurements were further carried out between RT and 525K. Formation of elemental Sb was observed beyond 400K. Between 450K and 500K, movement of zinc from lattice to interstitial position is observed, which is also accompanied by the onset of ZnSb formation. The overall zinc content within the β-Zn4Sb3 phase is observed to increase with increasing temperature. These observations indicate that both the overall zinc content and the ZnI/ZnL ratio are crucial in stabilizing the β-Zn4Sb3 phase. TMS, 2013 Thermoelectrics nationallicence transport properties nationallicence Seebeck coefficient nationallicence electrical conductivity nationallicence synchrotron radiation diffraction nationallicence Dasgupta T. German Aerospace Center (DLR), Institute of Materials Research, Linder Höhe, 51147, Cologne, Germany aut Yin H. Department of Chemistry and iNANO, Aarhus University, Langelandsgade 140, 8000, Aarhus, Denmark aut de Boor J. German Aerospace Center (DLR), Institute of Materials Research, Linder Höhe, 51147, Cologne, Germany aut Stiewe C. German Aerospace Center (DLR), Institute of Materials Research, Linder Höhe, 51147, Cologne, Germany aut Iversen B. Department of Chemistry and iNANO, Aarhus University, Langelandsgade 140, 8000, Aarhus, Denmark aut Müller E. German Aerospace Center (DLR), Institute of Materials Research, Linder Höhe, 51147, Cologne, Germany aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1988-1991 0361-5235 42:7<1988 2013 42 11664 https://doi.org/10.1007/s11664-013-2490-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2490-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Dasgupta T. German Aerospace Center (DLR), Institute of Materials Research, Linder Höhe, 51147, Cologne, Germany aut NATIONALLICENCE 700 1- Yin H. Department of Chemistry and iNANO, Aarhus University, Langelandsgade 140, 8000, Aarhus, Denmark aut NATIONALLICENCE 700 1- de Boor J. German Aerospace Center (DLR), Institute of Materials Research, Linder Höhe, 51147, Cologne, Germany aut NATIONALLICENCE 700 1- Stiewe C. German Aerospace Center (DLR), Institute of Materials Research, Linder Höhe, 51147, Cologne, Germany aut NATIONALLICENCE 700 1- Iversen B. Department of Chemistry and iNANO, Aarhus University, Langelandsgade 140, 8000, Aarhus, Denmark aut NATIONALLICENCE 700 1- Müller E. German Aerospace Center (DLR), Institute of Materials Research, Linder Höhe, 51147, Cologne, Germany aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1988-1991 0361-5235 42:7<1988 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer