naa a22 4500 510802575 CHVBK 20180411083402.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2304-2 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2304-2 Thermal Conductivity of Diameter-Modulated Silicon Nanowires Within a Frequency-Dependent Model for Phonon Boundary Scattering [Elektronische Daten] [X. Zianni, P. Chantrenne] Modulated nanowires have been proposed as candidates for efficient thermoelectric applications. It has been previously shown within the low-temperature ballistic regime of phonon transport that the thermal conductivity can be significantly reduced when the width of the nanowire is modulated. Here, we report on the thermal conductivity of modulated Si nanowires calculated within a kinetic theory model. The size dependence is taken into account through the sampling of k-points in the first Brillouin zone and a frequency-dependent calculation of the boundary scattering length. It has been found that the thermal conductivity of modulated nanowires can be drastically reduced compared with that of nanowires with constant width. Interestingly, the thermal conductivity is even smaller than that of corresponding straight wires with width equal to the smallest width in the modulated nanowires. The dramatic decrease of the thermal conductivity of modulated nanowires is attributed to their small transmissivity. TMS, 2012 Thermal conductivity nationallicence silicon nationallicence nanowires nationallicence boundary scattering nationallicence transmissivity nationallicence thermoelectric efficiency nationallicence Zianni X. Department of Applied Sciences, Technological Educational Institution of Chalkida, 34 400, Psachna, Greece aut Chantrenne P. MATEIS UMR 5510 CNRS, INSA de Lyon, Université de Lyon, 69621, Villeurbanne, France aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1509-1513 0361-5235 42:7<1509 2013 42 11664 https://doi.org/10.1007/s11664-012-2304-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2304-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zianni X. Department of Applied Sciences, Technological Educational Institution of Chalkida, 34 400, Psachna, Greece aut NATIONALLICENCE 700 1- Chantrenne P. MATEIS UMR 5510 CNRS, INSA de Lyon, Université de Lyon, 69621, Villeurbanne, France aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1509-1513 0361-5235 42:7<1509 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer