naa a22 4500 510802613 CHVBK 20180411083402.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2439-1 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2439-1 Effect of Initial Bulk Material Composition on Thermoelectric Properties of Bi2Te3 Thin Films [Elektronische Daten] [A. Budnik, E. Rogacheva, V. Pinegin, A. Sipatov, A. Fedorov] V2VI3 compounds and solid solutions based on them are known to be the best low-temperature thermoelectric (TE) materials. The predicted possibility of enhancement of the TE figure of merit in two-dimensional (2D) structures has stimulated studies of the properties of these materials in the thin-film state. The goal of the present work is to study the dependences of the Seebeck coefficient S, electrical conductivity σ, Hall coefficient R H, charge carrier mobility μ H, and TE power factor P=S 2 σ of Bi2Te3 thin films on the composition of the initial bulk material used for preparing them. Thin films with thickness d=200nm to 250nm were grown by thermal evaporation in vacuum of stoichiometric Bi2Te3 crystals (60.0at.% Te) and of crystals with 62.8at.% Te onto glass substrates at temperatures T S of 320K to 500K. It was established that the conductivity type of the initial material is reproduced in films fairly well. For both materials, an increase in T S leads to an increase in the thin-film structural perfection, better correspondence between the film composition and that of the initial material, and increase in S, R H, μ H, σ, and P. The room-temperature maximum values of P for the films grown from crystals with 60.0at.% and 62.8at.% Te are P=7.5×10−4W/K2m and 35×10−4W/K2m, respectively. Thus, by using Bi2Te3 crystals with different stoichiometry as initial materials, one can control the conductivity type and TE parameters of the films, applying a simple and low-cost method of thermal evaporation from a single source. TMS, 2013 Bi2Te3 thin films nationallicence bulk material nationallicence stoichiometry nationallicence substrate temperature nationallicence thermoelectric properties nationallicence Budnik A. National Technical University "Kharkov Polytechnic Institute”, 21 Frunze St., 61002, Kharkov, Ukraine aut Rogacheva E. National Technical University "Kharkov Polytechnic Institute”, 21 Frunze St., 61002, Kharkov, Ukraine aut Pinegin V. National Technical University "Kharkov Polytechnic Institute”, 21 Frunze St., 61002, Kharkov, Ukraine aut Sipatov A. National Technical University "Kharkov Polytechnic Institute”, 21 Frunze St., 61002, Kharkov, Ukraine aut Fedorov A. Institute for Scintillation Materials NAS of Ukraine, Kharkov, Ukraine aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1324-1329 0361-5235 42:7<1324 2013 42 11664 https://doi.org/10.1007/s11664-012-2439-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2439-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Budnik A. National Technical University "Kharkov Polytechnic Institute”, 21 Frunze St., 61002, Kharkov, Ukraine aut NATIONALLICENCE 700 1- Rogacheva E. National Technical University "Kharkov Polytechnic Institute”, 21 Frunze St., 61002, Kharkov, Ukraine aut NATIONALLICENCE 700 1- Pinegin V. National Technical University "Kharkov Polytechnic Institute”, 21 Frunze St., 61002, Kharkov, Ukraine aut NATIONALLICENCE 700 1- Sipatov A. National Technical University "Kharkov Polytechnic Institute”, 21 Frunze St., 61002, Kharkov, Ukraine aut NATIONALLICENCE 700 1- Fedorov A. Institute for Scintillation Materials NAS of Ukraine, Kharkov, Ukraine aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1324-1329 0361-5235 42:7<1324 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer