naa a22 4500 510802621 CHVBK 20180411083402.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2433-7 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2433-7 Effect of Ti Substitution on Thermoelectric Properties of W-Doped Heusler Fe2VAl Alloy [Elektronische Daten] [M. Mikami, K. Ozaki, H. Takazawa, A. Yamamoto, Y. Terazawa, T. Takeuchi] Effects of element substitutions on thermoelectric properties of Heusler Fe2VAl alloys were evaluated. By W substitution at the V site, the thermal conductivity is reduced effectively because of the enhancement of phonon scattering resulting from the introduction of W atoms, which have much greater atomic mass and volume than the constituent elements of Fe2VAl alloy. W substitution is also effective to obtain a large negative Seebeck coefficient and high electrical conductivity through an electron injection effect. To change the conduction type from n-type to p-type, additional Ti substitution at the V site, which reduces the valence electron density, was examined. A positive Seebeck coefficient as high as that of conventional p-type Fe2VAl alloy was obtained using a sufficient amount of Ti substitution. Electrical resistivity was reduced by the hole doping effect of the Ti substitution while maintaining low thermal conductivity. Compared with the conventional solo-Ti-substituted p-type Fe2VAl alloy, the ZT value was improved, reaching 0.13 at 450K. TMS, 2013 Thermoelectric material nationallicence Heusler alloy nationallicence powder metallurgy nationallicence element substitution nationallicence Mikami M. National Institute of Advanced Industrial Science and Technology, 463-8560, Nagoya, Japan aut Ozaki K. National Institute of Advanced Industrial Science and Technology, 463-8560, Nagoya, Japan aut Takazawa H. National Institute of Advanced Industrial Science and Technology, 305-8568, Tsukuba, Japan aut Yamamoto A. National Institute of Advanced Industrial Science and Technology, 305-8568, Tsukuba, Japan aut Terazawa Y. Department of Applied Physics, Nagoya University, 464-8603, Nagoya, Japan aut Takeuchi T. Department of Applied Physics, Nagoya University, 464-8603, Nagoya, Japan aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1801-1806 0361-5235 42:7<1801 2013 42 11664 https://doi.org/10.1007/s11664-012-2433-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2433-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Mikami M. National Institute of Advanced Industrial Science and Technology, 463-8560, Nagoya, Japan aut NATIONALLICENCE 700 1- Ozaki K. National Institute of Advanced Industrial Science and Technology, 463-8560, Nagoya, Japan aut NATIONALLICENCE 700 1- Takazawa H. National Institute of Advanced Industrial Science and Technology, 305-8568, Tsukuba, Japan aut NATIONALLICENCE 700 1- Yamamoto A. National Institute of Advanced Industrial Science and Technology, 305-8568, Tsukuba, Japan aut NATIONALLICENCE 700 1- Terazawa Y. Department of Applied Physics, Nagoya University, 464-8603, Nagoya, Japan aut NATIONALLICENCE 700 1- Takeuchi T. Department of Applied Physics, Nagoya University, 464-8603, Nagoya, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1801-1806 0361-5235 42:7<1801 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer