naa a22 4500 510802664 CHVBK 20180411083402.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-013-2606-z doi (NATIONALLICENCE)springer-10.1007/s11664-013-2606-z Effect of Cooling Conditions on the Microstructure and Thermoelectric Properties of Zn/Si-Codoped InSb [Elektronische Daten] [Donghun Kim, Ken Kurosaki, Yuji Ohishi, Hiroaki Muta, Shinsuke Yamanaka] InSb is a good candidate thermoelectric (TE) material owing to its high carrier mobility and narrow band gap around 0.18eV. However, a high figure of merit (ZT) value has not been achieved with InSb because of its high lattice thermal conductivity (κ lat). To reduce the κ lat of InSb, we prepared a ZnIn18SiSb20 alloy by Zn/Si codoping into the In lattice sites of InSb. Polycrystalline samples of ZnIn18SiSb20 were prepared by a solid-state reaction method combined with hot pressing. To investigate the microstructures and TE properties resulting from different cooling conditions, samples were prepared by water quenching or slow cooling after an annealing process. The different cooling conditions led to different ZnIn18SiSb20 microstructures and TE properties. The electrical transport properties showed that both samples exhibited metal-like behavior and p-type conduction. The thermal conductivity values of the quenched and slow-cooled samples at room temperature were 8.7Wm−1K−1 and 11.7Wm−1K−1, respectively. A maximum ZT value of 0.23 was obtained at 723K for the quenched ZnIn18SiSb20 sample. TMS, 2013 Thermoelectric nationallicence InSb nationallicence zincblende structure nationallicence ZnSiSb2 nationallicence chalcopyrite structure nationallicence thermal conductivity nationallicence Kim Donghun Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, 565-0871, Suita, Osaka, Japan aut Kurosaki Ken Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, 565-0871, Suita, Osaka, Japan aut Ohishi Yuji Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, 565-0871, Suita, Osaka, Japan aut Muta Hiroaki Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, 565-0871, Suita, Osaka, Japan aut Yamanaka Shinsuke Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, 565-0871, Suita, Osaka, Japan aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2388-2392 0361-5235 42:7<2388 2013 42 11664 https://doi.org/10.1007/s11664-013-2606-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2606-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kim Donghun Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Kurosaki Ken Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Ohishi Yuji Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Muta Hiroaki Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Yamanaka Shinsuke Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2388-2392 0361-5235 42:7<2388 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer