naa a22 4500 510802729 CHVBK 20180411083402.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2282-4 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2282-4 Thermoelectric Properties of the Entire Composition Range in Mg2Si0.9925− x Sn x Sb0.0075 [Elektronische Daten] [M. Søndergaard, M. Christensen, K. Borup, H. Yin, B.B. Iversen] Eleven samples of nominal composition Mg2.2Si0.9925−x Sn x Sb0.0075 with x=0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 0.9925 were prepared by induction melting, ball milling, and spark plasma sintering. Hall effect, resistivity, Seebeck coefficient, and thermal conductivity measurements were conducted from room temperature to 400°C. Six of the samples were investigated for thermal stability by measuring powder x-ray diffraction while heating to 400°C. All samples were stable in air during the ∼12-h-long data collection, except for Mg2.2Sn0.9925Sb0.0075, which showed development of an elemental Sn phase after heating. The lattice parameter of each sample was extracted through Rietveld refinement and revealed a linear dependency on nominal composition. Measurement of top and bottom of the pellets exhibited systematic differences in lattice parameter and Seebeck coefficient, indicating that stoichiometry gradients are created during sintering. TMS, 2012 Thermoelectric nationallicence Mg2Si1− x Sn x nationallicence thermal stability nationallicence functionally graded materials nationallicence Søndergaard M. Department of Chemistry and iNANO, Centre for Materials Crystallography and Centre for Energy Materials, Aarhus University, 8000, Aarhus C, Denmark aut Christensen M. Department of Chemistry and iNANO, Centre for Materials Crystallography and Centre for Energy Materials, Aarhus University, 8000, Aarhus C, Denmark aut Borup K. Department of Chemistry and iNANO, Centre for Materials Crystallography and Centre for Energy Materials, Aarhus University, 8000, Aarhus C, Denmark aut Yin H. Department of Chemistry and iNANO, Centre for Materials Crystallography and Centre for Energy Materials, Aarhus University, 8000, Aarhus C, Denmark aut Iversen B.B. Department of Chemistry and iNANO, Centre for Materials Crystallography and Centre for Energy Materials, Aarhus University, 8000, Aarhus C, Denmark aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1417-1421 0361-5235 42:7<1417 2013 42 11664 https://doi.org/10.1007/s11664-012-2282-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2282-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Søndergaard M. Department of Chemistry and iNANO, Centre for Materials Crystallography and Centre for Energy Materials, Aarhus University, 8000, Aarhus C, Denmark aut NATIONALLICENCE 700 1- Christensen M. Department of Chemistry and iNANO, Centre for Materials Crystallography and Centre for Energy Materials, Aarhus University, 8000, Aarhus C, Denmark aut NATIONALLICENCE 700 1- Borup K. Department of Chemistry and iNANO, Centre for Materials Crystallography and Centre for Energy Materials, Aarhus University, 8000, Aarhus C, Denmark aut NATIONALLICENCE 700 1- Yin H. Department of Chemistry and iNANO, Centre for Materials Crystallography and Centre for Energy Materials, Aarhus University, 8000, Aarhus C, Denmark aut NATIONALLICENCE 700 1- Iversen B.B. Department of Chemistry and iNANO, Centre for Materials Crystallography and Centre for Energy Materials, Aarhus University, 8000, Aarhus C, Denmark aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1417-1421 0361-5235 42:7<1417 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer