naa a22 4500 51080280X CHVBK 20180411083403.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-013-2511-5 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2511-5 Ge/SiGe Superlattices for Thermoelectric Devices Grown by Low-Energy Plasma-Enhanced Chemical Vapor Deposition [Elektronische Daten] [S. Cecchi, T. Etzelstorfer, E. Müller, A. Samarelli, L. Ferre Llin, D. Chrastina, G. Isella, J. Stangl, J. Weaver, P. Dobson, D. Paul] Ge/SiGe multiple quantum wells are presented as efficient material for room-temperature thermoelectric generators monolithically integrated onto silicon. We have deposited and characterized 10-μm-thick heterostructures engineered for lateral devices, in which both heat and current flow parallel to the multilayer. In this paper we investigate in detail the structural and interface quality by means of x-ray diffraction and transmission electron microscopy. Thermoelectric measurements, giving a figure of merit of 0.04 to 0.08, together with mobility spectra and defect analysis suggest possibilities of even higher efficiency. Nevertheless, the high power factor of 2mW/K2m to 6mW/K2m is promising for applications. TMS, 2013 Silicon germanium nationallicence multiple quantum well nationallicence thermoelectrics nationallicence Cecchi S. L-NESS Politecnico di Milano, Polo Territoriale di Como, via Anzani 42, 22100, Como, Italy aut Etzelstorfer T. Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergerstrae 69, 4040, Linz, Austria aut Müller E. Electron Microscopy ETH Zurich (EMEZ), Wolfgang-Pauli-Str. 16, 8093, Zurich, Switzerland aut Samarelli A. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, G12 8LT, Glasgow, UK aut Ferre Llin L. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, G12 8LT, Glasgow, UK aut Chrastina D. L-NESS Politecnico di Milano, Polo Territoriale di Como, via Anzani 42, 22100, Como, Italy aut Isella G. L-NESS Politecnico di Milano, Polo Territoriale di Como, via Anzani 42, 22100, Como, Italy aut Stangl J. Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergerstrae 69, 4040, Linz, Austria aut Weaver J. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, G12 8LT, Glasgow, UK aut Dobson P. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, G12 8LT, Glasgow, UK aut Paul D. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, G12 8LT, Glasgow, UK aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2030-2034 0361-5235 42:7<2030 2013 42 11664 https://doi.org/10.1007/s11664-013-2511-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2511-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Cecchi S. L-NESS Politecnico di Milano, Polo Territoriale di Como, via Anzani 42, 22100, Como, Italy aut NATIONALLICENCE 700 1- Etzelstorfer T. Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergerstrae 69, 4040, Linz, Austria aut NATIONALLICENCE 700 1- Müller E. Electron Microscopy ETH Zurich (EMEZ), Wolfgang-Pauli-Str. 16, 8093, Zurich, Switzerland aut NATIONALLICENCE 700 1- Samarelli A. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, G12 8LT, Glasgow, UK aut NATIONALLICENCE 700 1- Ferre Llin L. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, G12 8LT, Glasgow, UK aut NATIONALLICENCE 700 1- Chrastina D. L-NESS Politecnico di Milano, Polo Territoriale di Como, via Anzani 42, 22100, Como, Italy aut NATIONALLICENCE 700 1- Isella G. L-NESS Politecnico di Milano, Polo Territoriale di Como, via Anzani 42, 22100, Como, Italy aut NATIONALLICENCE 700 1- Stangl J. Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergerstrae 69, 4040, Linz, Austria aut NATIONALLICENCE 700 1- Weaver J. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, G12 8LT, Glasgow, UK aut NATIONALLICENCE 700 1- Dobson P. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, G12 8LT, Glasgow, UK aut NATIONALLICENCE 700 1- Paul D. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, G12 8LT, Glasgow, UK aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2030-2034 0361-5235 42:7<2030 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer