naa a22 4500 510802826 CHVBK 20180411083403.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2415-9 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2415-9 Thermoelectric Properties of Higher Manganese Silicides Prepared by Mechanical Alloying and Hot Pressing [Elektronische Daten] [Dong-Kil Shin, Kyung-Wook Jang, Soon-Chul Ur, Il-Ho Kim] Higher manganese silicides (HMS), MnSi1.75-δ , were synthesized by mechanical alloying and consolidated by hot pressing. The optimum condition of mechanical alloying was ball milling at 400rpm for 6h, and sound sintered compacts could be obtained by hot pressing at temperature higher than 1073K. The phase fraction of HMS showed no significant difference with compositional (δ) variation, but the MnSi1.75 specimen had the lowest fraction of MnSi of approximately 3%. The lattice constants of HMS with compositional variation were similar to values reported in the literature. All specimens showed Nowotny phase with tetragonal structure, and exhibited i-type conduction at measuring temperatures between 323K and 823K. HMS behaved as degenerate semiconductors in that the absolute values of the Seebeck coefficient increased and the electrical conductivity slightly decreased with increasing temperature. MnSi1.73 showed the highest figure of merit of 0.28 at 823K. TMS, 2013 Thermoelectric nationallicence higher manganese silicide nationallicence mechanical alloying nationallicence hot pressing nationallicence Shin Dong-Kil Department of Materials Science and Engineering, Korea National University of Transportation, Chungju, 380-702, Chungbuk, South Korea aut Jang Kyung-Wook Department of Advanced Materials Engineering, Hanseo University, Seosan, 356-706, Chungnam, South Korea aut Ur Soon-Chul Department of Materials Science and Engineering, Korea National University of Transportation, Chungju, 380-702, Chungbuk, South Korea aut Kim Il-Ho Department of Materials Science and Engineering, Korea National University of Transportation, Chungju, 380-702, Chungbuk, South Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1756-1761 0361-5235 42:7<1756 2013 42 11664 https://doi.org/10.1007/s11664-012-2415-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2415-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Shin Dong-Kil Department of Materials Science and Engineering, Korea National University of Transportation, Chungju, 380-702, Chungbuk, South Korea aut NATIONALLICENCE 700 1- Jang Kyung-Wook Department of Advanced Materials Engineering, Hanseo University, Seosan, 356-706, Chungnam, South Korea aut NATIONALLICENCE 700 1- Ur Soon-Chul Department of Materials Science and Engineering, Korea National University of Transportation, Chungju, 380-702, Chungbuk, South Korea aut NATIONALLICENCE 700 1- Kim Il-Ho Department of Materials Science and Engineering, Korea National University of Transportation, Chungju, 380-702, Chungbuk, South Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1756-1761 0361-5235 42:7<1756 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer