naa a22 4500 510802842 CHVBK 20180411083403.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-013-2470-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2470-x Improved Thermal Behavior of Multiple Linked Arrays of Silicon Nanowires Integrated into Planar Thermoelectric Microgenerators [Elektronische Daten] [Diana Dávila, Albert Tarancón, Carlos Calaza, Marc Salleras, Marta Fernández-Regúlez, Alvaro Paulo, Luis Fonseca] Low-dimensional structures have been shown to be promising candidates for enhancing the thermoelectric properties of semiconductors, paving the way for integration of thermoelectric generators into silicon microtechnology. With this aim, dense arrays of well-oriented and size-controlled silicon nanowires (Si NWs) obtained by the chemical vapor deposition (CVD)-vapor-liquid-solid (VLS) mechanism have been implemented into microfabricated structures to develop planar unileg thermoelectric microgenerators (μTEGs). Different low-thermal-mass suspended structures have been designed and microfabricated on silicon-on-insulator (SOI) substrates to operate as microthermoelements using p-type Si NW arrays as the thermoelectric material. To obtain nanowire arrays with effective lengths larger than normally attained by the VLS technique, structures composed of multiple ordered arrays consecutively bridged by transversal microspacers have been fabricated. The successive linkage of multiple Si NW arrays enabled the development of larger temperature differences while preserving good electrical contact. This gives rise to small internal thermoelement resistances, enhancing the performance of the devices as energy harvesters. TMS, 2013 Silicon nanowires nationallicence thermoelectricity nationallicence energy harvesting nationallicence thermoelectric microgenerators nationallicence Dávila Diana Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Campus UAB, 08193, Bellaterra, Barcelona, Spain aut Tarancón Albert Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930, Sant Adrià de Besòs, Barcelona, Spain aut Calaza Carlos Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Campus UAB, 08193, Bellaterra, Barcelona, Spain aut Salleras Marc Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Campus UAB, 08193, Bellaterra, Barcelona, Spain aut Fernández-Regúlez Marta Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Campus UAB, 08193, Bellaterra, Barcelona, Spain aut Paulo Alvaro Instituto de Microelectrónica de Madrid (IMM-CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid, Spain aut Fonseca Luis Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Campus UAB, 08193, Bellaterra, Barcelona, Spain aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1918-1925 0361-5235 42:7<1918 2013 42 11664 https://doi.org/10.1007/s11664-013-2470-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2470-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Dávila Diana Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Campus UAB, 08193, Bellaterra, Barcelona, Spain aut NATIONALLICENCE 700 1- Tarancón Albert Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930, Sant Adrià de Besòs, Barcelona, Spain aut NATIONALLICENCE 700 1- Calaza Carlos Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Campus UAB, 08193, Bellaterra, Barcelona, Spain aut NATIONALLICENCE 700 1- Salleras Marc Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Campus UAB, 08193, Bellaterra, Barcelona, Spain aut NATIONALLICENCE 700 1- Fernández-Regúlez Marta Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Campus UAB, 08193, Bellaterra, Barcelona, Spain aut NATIONALLICENCE 700 1- Paulo Alvaro Instituto de Microelectrónica de Madrid (IMM-CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid, Spain aut NATIONALLICENCE 700 1- Fonseca Luis Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Campus UAB, 08193, Bellaterra, Barcelona, Spain aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1918-1925 0361-5235 42:7<1918 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer