naa a22 4500 510802885 CHVBK 20180411083403.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-013-2568-1 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2568-1 Sequential Evaporation of Bi-Te Thin Films with Controllable Composition and Their Thermoelectric Transport Properties [Elektronische Daten] [A. Zhou, L. Feng, H. Cui, J. Li, G. Jiang, X. Zhao] We report a simplified sequential evaporation route that can deposit compositionally controllable Bi-Te thermoelectric (TE) thin films without the need for a highly controlled facility. Te and Bi granules were used as starting materials, with their ratio being adjusted to obtain Bi-Te films with different compositions and thicknesses. The as-evaporated and annealed films were subjected to structural and morphological analysis, and their transport properties were measured. X-Ray diffraction data revealed multiple phases for most films. Energy-dispersive x-ray spectroscopy showed that the film composition was Te-enriched due to the large vapor pressure difference of Te and Bi. A Bi2Te3 single phase was obtained in the annealed films, having nominal composition of BiTe1.2. The existence of impurity phases, such as Bi4Te3 or elemental Te, was found in all the as-evaporated films and in the annealed films with other nominal Te/Bi ratios, which degraded the TE properties of the films by increasing their electrical conductivity and reducing their Seebeck coefficient. A pure Bi2Te3 film with nominal Te/Bi ratio of 1.2 exhibited a maximum power factor of 7.9×10−4Wm−1K2 after annealing at 200°C. This work demonstrated a simple, undemanding, reliable method to deposit Bi-Te-based TE thin films that can be utilized to fabricate low-cost TE microgenerators. TMS, 2013 Bismuth telluride nationallicence thin film nationallicence sequential evaporation nationallicence annealing nationallicence transport properties nationallicence Zhou A. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut Feng L. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut Cui H. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut Li J. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut Jiang G. State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, China aut Zhao X. State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2184-2191 0361-5235 42:7<2184 2013 42 11664 https://doi.org/10.1007/s11664-013-2568-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2568-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zhou A. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Feng L. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Cui H. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Li J. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Jiang G. State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, China aut NATIONALLICENCE 700 1- Zhao X. State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2184-2191 0361-5235 42:7<2184 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer