naa a22 4500 510802923 CHVBK 20180411083403.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-013-2645-5 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2645-5 Improved Thermoelectric Properties of Se-Doped n -Type PbTe1− x Se x (0≤ x ≤1) [Elektronische Daten] [Ranita Basu, S. Bhattacharya, Ranu Bhatt, Ajay Singh, D. Aswal, S. Gupta] Enhancement of the thermoelectric figure of merit is of prime importance for any thermoelectric material. Lead telluride has received attention as a potential thermoelectric material. In this work, the effect of Se substitution has been systematically investigated in PbTe1−x Se x . The thermoelectric properties of synthesized alloys were measured in the temperature range of 300K to 873K. For the particular composition of x=0.5, α was highest at ~292μV/K, while k was lowest at ~0.75W/m-K, resulting in the highest dimensionless figure of merit of ZT≈0.95 at 600K. The increase in thermopower for x=0.5 can be attributed to the high distortion in the crystal lattice which leads to the formation of defect states. These defect states scatter the majority charge carriers, leading to high thermopower and high electrical resistivity. The dramatic reduction of the thermal conductivity for x=0.5 can be attributed to phonon scattering by defect states. TMS, 2013 Thermoelectric materials nationallicence defects nationallicence thermal conductivity nationallicence Basu Ranita Technical Physics Division, Bhabha Atomic Research Centre, 400085, Mumbai, India aut Bhattacharya S. Technical Physics Division, Bhabha Atomic Research Centre, 400085, Mumbai, India aut Bhatt Ranu Technical Physics Division, Bhabha Atomic Research Centre, 400085, Mumbai, India aut Singh Ajay Technical Physics Division, Bhabha Atomic Research Centre, 400085, Mumbai, India aut Aswal D. Technical Physics Division, Bhabha Atomic Research Centre, 400085, Mumbai, India aut Gupta S. Technical Physics Division, Bhabha Atomic Research Centre, 400085, Mumbai, India aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2292-2296 0361-5235 42:7<2292 2013 42 11664 https://doi.org/10.1007/s11664-013-2645-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2645-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Basu Ranita Technical Physics Division, Bhabha Atomic Research Centre, 400085, Mumbai, India aut NATIONALLICENCE 700 1- Bhattacharya S. Technical Physics Division, Bhabha Atomic Research Centre, 400085, Mumbai, India aut NATIONALLICENCE 700 1- Bhatt Ranu Technical Physics Division, Bhabha Atomic Research Centre, 400085, Mumbai, India aut NATIONALLICENCE 700 1- Singh Ajay Technical Physics Division, Bhabha Atomic Research Centre, 400085, Mumbai, India aut NATIONALLICENCE 700 1- Aswal D. Technical Physics Division, Bhabha Atomic Research Centre, 400085, Mumbai, India aut NATIONALLICENCE 700 1- Gupta S. Technical Physics Division, Bhabha Atomic Research Centre, 400085, Mumbai, India aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2292-2296 0361-5235 42:7<2292 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer