naa a22 4500 510802966 CHVBK 20180411083403.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2280-6 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2280-6 Enhancing the Thermoelectric Properties of p -Type Bulk Bi-Sb-Te Nanocomposites via Solution-Based Metal Nanoparticle Decoration [Elektronische Daten] [Sungwoo Hwang, Sang-Il Kim, Kyunghan Ahn, Jong Roh, Dae-Jin Yang, Sang-Mock Lee, Kyu-Hyoung Lee] Embedding nanosized particles in bulk thermoelectric materials is expected to lower the lattice thermal conductivity by enhancing the degree of interface phonon scattering, thus improving their thermoelectric figure of merit ZT. We have developed a wet chemical process to fabricate Bi0.5Sb1.5Te3-based thermoelectric nanocomposites which include nanometer-sized metal particles. By simple solution mixing of metal acetate precursors and Bi0.5Sb1.5Te3 powders in ethyl acetate as a medium for homogeneous incorporation, it is possible to apply various types of metal nanoparticles onto the surfaces of the thermoelectric powders. Next, bulk Bi0.5Sb1.5Te3 nanocomposites with homogeneously dispersed metal nanoparticles were fabricated using a spark plasma sintering technique. The lattice thermal conductivities were reduced by increasing the long-wavelength phonon scattering in the presence of metal nanoparticles, while the Seebeck coefficients increased for a few selected metal-decorated nanocomposites, possibly due to the carrier-energy-filtering effect. Finally, the figure of merit ZT was enhanced to 1.4 near room temperature. This approach highlights the feasibility of incorporating various types of nanoparticles into an alloy matrix starting by wet chemical routes, which is an effective means of improving the thermoelectric performance of Bi-Te-based alloys. TMS, 2012 Metal nanoparticle decoration nationallicence Bi0.5Sb1.5Te3 nationallicence thermoelectric nanocomposite nationallicence spark plasma sintering nationallicence carrier filtering effect nationallicence Hwang Sungwoo Functional Material Group, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 446-712, Yong-In, Republic of Korea aut Kim Sang-Il Functional Material Group, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 446-712, Yong-In, Republic of Korea aut Ahn Kyunghan Functional Material Group, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 446-712, Yong-In, Republic of Korea aut Roh Jong Functional Material Group, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 446-712, Yong-In, Republic of Korea aut Yang Dae-Jin Functional Material Group, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 446-712, Yong-In, Republic of Korea aut Lee Sang-Mock Functional Material Group, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 446-712, Yong-In, Republic of Korea aut Lee Kyu-Hyoung Functional Material Group, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 446-712, Yong-In, Republic of Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1411-1416 0361-5235 42:7<1411 2013 42 11664 https://doi.org/10.1007/s11664-012-2280-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2280-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Hwang Sungwoo Functional Material Group, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 446-712, Yong-In, Republic of Korea aut NATIONALLICENCE 700 1- Kim Sang-Il Functional Material Group, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 446-712, Yong-In, Republic of Korea aut NATIONALLICENCE 700 1- Ahn Kyunghan Functional Material Group, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 446-712, Yong-In, Republic of Korea aut NATIONALLICENCE 700 1- Roh Jong Functional Material Group, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 446-712, Yong-In, Republic of Korea aut NATIONALLICENCE 700 1- Yang Dae-Jin Functional Material Group, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 446-712, Yong-In, Republic of Korea aut NATIONALLICENCE 700 1- Lee Sang-Mock Functional Material Group, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 446-712, Yong-In, Republic of Korea aut NATIONALLICENCE 700 1- Lee Kyu-Hyoung Functional Material Group, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 446-712, Yong-In, Republic of Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1411-1416 0361-5235 42:7<1411 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer