naa a22 4500 510803016 CHVBK 20180411083404.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2288-y doi (NATIONALLICENCE)springer-10.1007/s11664-012-2288-y Thermoelectric Performance of Multiple-Doped Co4Sb12− x − y − z Ge x Te y S z Skutterudite Compounds [Elektronische Daten] [Bo Duan, Pengcheng Zhai, Lisheng Liu, Gang Chen, Peng Li, Qingjie Zhang] CoSb3 skutterudites multiply doped with Ge, Te, and S were synthesized by solid-state reaction and spark plasma sintering. x-Ray diffraction studies revealed that Ge, Te, and S entered the lattice of the CoSb3 compounds, and while Te increased the lattice volume, Ge and S decreased it. Compared with the undoped and single-doped CoSb3 compounds, the thermal conductivity and lattice thermal conductivity are significantly suppressed due to greatly increased point defect scattering. It is found that S is more effective for decreasing the lattice thermal conductivity than Te and Ge. The highest thermoelectric figure of merit, ZT, exceeds 1.1 for the Co4Sb11.25Ge0.05Te0.63S0.07 compound at 800K. TMS, 2012 Skutterudite nationallicence doping nationallicence thermal conductivity nationallicence Duan Bo State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut Zhai Pengcheng State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut Liu Lisheng State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut Chen Gang State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut Li Peng State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut Zhang Qingjie State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1454-1457 0361-5235 42:7<1454 2013 42 11664 https://doi.org/10.1007/s11664-012-2288-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2288-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Duan Bo State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut NATIONALLICENCE 700 1- Zhai Pengcheng State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut NATIONALLICENCE 700 1- Liu Lisheng State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut NATIONALLICENCE 700 1- Chen Gang State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut NATIONALLICENCE 700 1- Li Peng State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut NATIONALLICENCE 700 1- Zhang Qingjie State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070, Wuhan, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1454-1457 0361-5235 42:7<1454 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer