naa a22 4500 510803059 CHVBK 20180411083404.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2325-x doi (NATIONALLICENCE)springer-10.1007/s11664-012-2325-x The Influence of Spark Plasma Sintering Temperature on the Microstructure and Thermoelectric Properties of Al,Ga Dual-Doped ZnO [Elektronische Daten] [Li Han, Le Hung, Ngo van Nong, Nini Pryds, Søren Linderoth] ZnO dual-doped with Al and Ga was prepared by spark plasma sintering using different sintering temperatures. The microstructural evolution and thermoelectric properties of the samples were investigated in detail. The samples obtained with sintering temperature above 1223K had higher relative densities and higher electronic conductivity than the sample sintered at 1073K. These results were supported by the solid-state reaction completion rate, which suggested that sintering temperature above 1223K would be preferable for complete solid-state reaction of the samples. The sintering mechanism of ZnO particles and microstructure evolution at different sintering temperatures were investigated by simulation of the self-Joule-heating effect of the individual particles. TMS, 2012 Thermoelectric oxide nationallicence spark plasma sintering nationallicence Al,Ga-codoped ZnO nationallicence sintering temperature nationallicence Han Li Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, 4000, Roskilde, Denmark aut Hung Le Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, 4000, Roskilde, Denmark aut van Nong Ngo Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, 4000, Roskilde, Denmark aut Pryds Nini Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, 4000, Roskilde, Denmark aut Linderoth Søren Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, 4000, Roskilde, Denmark aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1573-1581 0361-5235 42:7<1573 2013 42 11664 https://doi.org/10.1007/s11664-012-2325-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2325-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Han Li Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, 4000, Roskilde, Denmark aut NATIONALLICENCE 700 1- Hung Le Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, 4000, Roskilde, Denmark aut NATIONALLICENCE 700 1- van Nong Ngo Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, 4000, Roskilde, Denmark aut NATIONALLICENCE 700 1- Pryds Nini Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, 4000, Roskilde, Denmark aut NATIONALLICENCE 700 1- Linderoth Søren Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, 4000, Roskilde, Denmark aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1573-1581 0361-5235 42:7<1573 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer