naa a22 4500 510803075 CHVBK 20180411083404.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-013-2533-z doi (NATIONALLICENCE)springer-10.1007/s11664-013-2533-z Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires Using the Valence Force Field Method [Elektronische Daten] [Hossein Karamitaheri, Neophytos Neophytou, Mohsen Taheri, Rahim Faez, Hans Kosina] We study the effect of confinement on the phonon properties of ultra-narrow silicon nanowires of side sizes of 1nm to 10nm. We use the modified valence force field (MVFF) method to compute the phononic dispersion and extract the density of states, the transmission function, the sound velocity, the ballistic thermal conductance, and boundary-scattering-limited diffusive thermal conductivity. We find that the phononic dispersion and the ballistic thermal conductance are functions of the geometrical features of the structures, i.e., the transport orientation and confinement dimension. The phonon group velocity and thermal conductance can vary by a factor of two depending on the geometrical features of the channel. The 〈110#x232A; nanowire has the highest group velocity and thermal conductance, whereas the 〈111#x232A; has the lowest. The 〈111#x232A; channel is thus the most suitable orientation for thermoelectric devices based on Si nanowires since it also has a large power factor. Our findings could be useful in the thermal transport design of silicon-based devices for thermoelectric and thermal management applications. TMS, 2013 Confined phonons nationallicence silicon nanowires nationallicence lattice thermal conductance nationallicence modified valence force field method nationallicence Landauer formula nationallicence Karamitaheri Hossein Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040, Wien, Austria aut Neophytou Neophytos Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040, Wien, Austria aut Taheri Mohsen Department of Computer Engineering, Naragh Branch, Islamic Azad University, Naragh, Iran aut Faez Rahim School of Electrical Engineering, Sharif University of Technology, Tehran, Iran aut Kosina Hans Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040, Wien, Austria aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2091-2097 0361-5235 42:7<2091 2013 42 11664 https://doi.org/10.1007/s11664-013-2533-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2533-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Karamitaheri Hossein Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040, Wien, Austria aut NATIONALLICENCE 700 1- Neophytou Neophytos Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040, Wien, Austria aut NATIONALLICENCE 700 1- Taheri Mohsen Department of Computer Engineering, Naragh Branch, Islamic Azad University, Naragh, Iran aut NATIONALLICENCE 700 1- Faez Rahim School of Electrical Engineering, Sharif University of Technology, Tehran, Iran aut NATIONALLICENCE 700 1- Kosina Hans Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040, Wien, Austria aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2091-2097 0361-5235 42:7<2091 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer