naa a22 4500 51080313X CHVBK 20180411083404.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2751-4 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2751-4 Effects of H2 Atmosphere Annealing on the Properties of CZT:In Single Crystals [Elektronische Daten] [P.F. Yu, W.Q. Jie] To improve crystal quality and detector performance, high-resistivity cadmium zinc telluride (CZT):In single crystals were annealed in H2. The concentration of Te inclusions did not change after annealing. Both the resistivity and infrared transmittance increased as the annealing time increased, indicating improvement of crystal quality. Because of the passivation by hydrogen, some interesting phenomena were observed in the photoluminescence spectra of as-grown and annealed CZT:In crystals. Moreover, the energy resolution was remarkably enhanced. After 4h, 8h, and 12h of annealing, the energy resolution was improved 33%, 79%, and 49%, respectively. The crystal annealed for 8h with energy resolution of 9.29% had the best detector performance. TMS, 2013 CdZnTe:In nationallicence resistivity nationallicence IR transmittance nationallicence PL spectrum nationallicence radiation detector nationallicence Yu P.F. School of Materials Science and Engineering, Chang'an University, 710061, Xi'an, China aut Jie W.Q. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, 710072, Xi'an, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3385-3389 0361-5235 42:12<3385 2013 42 11664 https://doi.org/10.1007/s11664-013-2751-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2751-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yu P.F. School of Materials Science and Engineering, Chang'an University, 710061, Xi'an, China aut NATIONALLICENCE 700 1- Jie W.Q. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, 710072, Xi'an, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3385-3389 0361-5235 42:12<3385 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer