naa a22 4500 510803148 CHVBK 20180411083404.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2719-4 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2719-4 Luminescence Properties of Cobalt-Doped ZnO Films Prepared by Sol-Gel Method [Elektronische Daten] [Jianping Xu, Shaobo Shi, Lan Li, Xiaosong Zhang, Youwei Wang, Qingliang Shi, Shubin Li, Hao Wang] Pure ZnO and Co-doped ZnO films have been deposited on coverslip substrates by sol-gel spin coating. The morphological, structural, and optical properties of the films were investigated. The microstructure of the ZnO films became increasingly fine and the crystalline size decreased with Co doping. Analysis of x-ray diffraction (XRD) and Raman spectra reveals that Co2+ ions are substituted for Zn2+ ions in the ZnO lattice without changing its wurtzite structure. Co doping induces a decrease of the band-gap energy and fluorescence quenching of the emission bands. The spectra related to transitions within the tetrahedral Co2+ ions in the ZnO host crystal were observed in absorption and luminescence spectra. Photoluminescence (PL) spectra under different excitation energies and PL excitation spectra for the visible emissions suggest that the orange-red emission and green emission could be related to interstitial zinc (Zni) shallow donors and oxygen vacancy (V O) deep donors, respectively. The red emission of Co-doped ZnO film could be assigned to the radiative transitions within the tetrahedral Co2+ ions in the ZnO host crystal after band-to-band excitation. A consistent explanation for the pure and Co-doped ZnO films is that the red emission under the excitation energy below the band gap is probably associated with extended Zni states. TMS, 2013 ZnO films nationallicence doping nationallicence optical properties nationallicence defects nationallicence Xu Jianping Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, 300384, Tianjin, China aut Shi Shaobo School of Science, Tianjin University of Technology and Education, 300222, Tianjin, China aut Li Lan Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, 300384, Tianjin, China aut Zhang Xiaosong Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, 300384, Tianjin, China aut Wang Youwei Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, 300384, Tianjin, China aut Shi Qingliang Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, 300384, Tianjin, China aut Li Shubin Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, 300384, Tianjin, China aut Wang Hao Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, 300384, Tianjin, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3438-3444 0361-5235 42:12<3438 2013 42 11664 https://doi.org/10.1007/s11664-013-2719-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2719-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Xu Jianping Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, 300384, Tianjin, China aut NATIONALLICENCE 700 1- Shi Shaobo School of Science, Tianjin University of Technology and Education, 300222, Tianjin, China aut NATIONALLICENCE 700 1- Li Lan Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, 300384, Tianjin, China aut NATIONALLICENCE 700 1- Zhang Xiaosong Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, 300384, Tianjin, China aut NATIONALLICENCE 700 1- Wang Youwei Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, 300384, Tianjin, China aut NATIONALLICENCE 700 1- Shi Qingliang Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, 300384, Tianjin, China aut NATIONALLICENCE 700 1- Li Shubin Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, 300384, Tianjin, China aut NATIONALLICENCE 700 1- Wang Hao Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, 300384, Tianjin, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3438-3444 0361-5235 42:12<3438 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer