naa a22 4500 510803202 CHVBK 20180411083404.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2785-7 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2785-7 Composite Semiconductor Material of Carbon Nanotubes and Poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] for High-Performance Organic Thin-Film Transistors [Elektronische Daten] [Cameron Derry, Yiliang Wu, Shiping Zhu, Jamal Deen] A nonpercolating network of non-covalently functionalized single-walled carbon nanotubes was embedded within air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] (PQT-12) thin films for the purpose of enhancing the field-effect mobility in thin-film transistors. The host polymer was used to stabilize the nanotubes in suspension through π-orbital overlap caused by simple application of ultrasonication. The stable nanotube suspension was cast into two different device architectures, both of which exhibited excellent on/off ratios ranging from 105 to 106 and dramatically improved mobilities compared with pristine PQT-12 semiconductor. A single-layer film with nanotubes embedded throughout was easy to fabricate and had mobility up to 0.34cm2/Vs, an enhancement of over 3× compared with PQT-12. Placing the nanotubes closer to the dielectric surface in a dual-layer approach resulted in a mobility improvement of up to six times (0.58cm2/Vs). The effects of the nanotube content on the polymer interaction within the suspension, film morphology, and electrical properties were investigated as well. TMS, 2013 Organic thin-film transistors nationallicence polythiophene semiconductor nationallicence single-walled carbon nanotubes nationallicence field-effect mobility nationallicence Derry Cameron Advanced Materials Laboratory, Xerox Research Centre of Canada, L5K 2L1, Mississauga, ON, Canada aut Wu Yiliang Advanced Materials Laboratory, Xerox Research Centre of Canada, L5K 2L1, Mississauga, ON, Canada aut Zhu Shiping Department of Material Science and Engineering, McMaster University, L8S 4L8, Hamilton, ON, Canada aut Deen Jamal Department of Electrical and Computer Engineering, McMaster University, L8S 4L8, Hamilton, ON, Canada aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3481-3488 0361-5235 42:12<3481 2013 42 11664 https://doi.org/10.1007/s11664-013-2785-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2785-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Derry Cameron Advanced Materials Laboratory, Xerox Research Centre of Canada, L5K 2L1, Mississauga, ON, Canada aut NATIONALLICENCE 700 1- Wu Yiliang Advanced Materials Laboratory, Xerox Research Centre of Canada, L5K 2L1, Mississauga, ON, Canada aut NATIONALLICENCE 700 1- Zhu Shiping Department of Material Science and Engineering, McMaster University, L8S 4L8, Hamilton, ON, Canada aut NATIONALLICENCE 700 1- Deen Jamal Department of Electrical and Computer Engineering, McMaster University, L8S 4L8, Hamilton, ON, Canada aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3481-3488 0361-5235 42:12<3481 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer