naa a22 4500 510803210 CHVBK 20180411083405.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2794-6 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2794-6 Optimization of Annealing Process for Improved InGaN Solar Cell Performance [Elektronische Daten] [N.C. Das, M.L. Reed, A.V. Sampath, H. Shen, M. Wraback, R.M. Farrell, M. Iza, S.C. Cruz, J.R. Lang, N.G. Young, Y. Terao, C. Neufeld, S. Keller, S. Nakamura, S.P. DenBaars, U.K. Mishra, J.S. Speck] We report enhanced performance of InGaN solar cells grown by metalorganic chemical vapor deposition through optimization of the annealing of the epitaxial wafer before device fabrication. We varied the annealing environment gas mixtures as well as temperatures to obtain the optimized annealing condition. It was found that the major improvement of the nitride solar cell efficiency after annealing is in the increase of the V oc. In addition, annealing at the reasonably moderate temperature of 550°C in O2 environment results in the highest-efficiency InGaN solar cell devices compared with devices annealed at different temperatures and in different gas environments. TMS (outside the USA), 2013 Solar cell nationallicence annealing nationallicence InGaN QW nationallicence open-circuit voltage nationallicence Das N.C. U.S. Army Research Laboratory, RDRL-SEE-M, 2800 Powder Mill Rd., 20783, Adelphi, MD, USA aut Reed M.L. U.S. Army Research Laboratory, RDRL-SEE-M, 2800 Powder Mill Rd., 20783, Adelphi, MD, USA aut Sampath A.V. U.S. Army Research Laboratory, RDRL-SEE-M, 2800 Powder Mill Rd., 20783, Adelphi, MD, USA aut Shen H. U.S. Army Research Laboratory, RDRL-SEE-M, 2800 Powder Mill Rd., 20783, Adelphi, MD, USA aut Wraback M. U.S. Army Research Laboratory, RDRL-SEE-M, 2800 Powder Mill Rd., 20783, Adelphi, MD, USA aut Farrell R.M. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut Iza M. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut Cruz S.C. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut Lang J.R. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut Young N.G. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut Terao Y. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut Neufeld C. Department of Electrical and Computer Engineering, University of California, Santa Barbara, 93106, Santa Barbara, CA, USA aut Keller S. Department of Electrical and Computer Engineering, University of California, Santa Barbara, 93106, Santa Barbara, CA, USA aut Nakamura S. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut DenBaars S.P. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut Mishra U.K. Department of Electrical and Computer Engineering, University of California, Santa Barbara, 93106, Santa Barbara, CA, USA aut Speck J.S. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3467-3470 0361-5235 42:12<3467 2013 42 11664 https://doi.org/10.1007/s11664-013-2794-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2794-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Das N.C. U.S. Army Research Laboratory, RDRL-SEE-M, 2800 Powder Mill Rd., 20783, Adelphi, MD, USA aut NATIONALLICENCE 700 1- Reed M.L. U.S. Army Research Laboratory, RDRL-SEE-M, 2800 Powder Mill Rd., 20783, Adelphi, MD, USA aut NATIONALLICENCE 700 1- Sampath A.V. U.S. Army Research Laboratory, RDRL-SEE-M, 2800 Powder Mill Rd., 20783, Adelphi, MD, USA aut NATIONALLICENCE 700 1- Shen H. U.S. Army Research Laboratory, RDRL-SEE-M, 2800 Powder Mill Rd., 20783, Adelphi, MD, USA aut NATIONALLICENCE 700 1- Wraback M. U.S. Army Research Laboratory, RDRL-SEE-M, 2800 Powder Mill Rd., 20783, Adelphi, MD, USA aut NATIONALLICENCE 700 1- Farrell R.M. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- Iza M. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- Cruz S.C. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- Lang J.R. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- Young N.G. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- Terao Y. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- Neufeld C. Department of Electrical and Computer Engineering, University of California, Santa Barbara, 93106, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- Keller S. Department of Electrical and Computer Engineering, University of California, Santa Barbara, 93106, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- Nakamura S. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- DenBaars S.P. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- Mishra U.K. Department of Electrical and Computer Engineering, University of California, Santa Barbara, 93106, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- Speck J.S. Materials Department, University of California, 93106, Santa Barbara, CA, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3467-3470 0361-5235 42:12<3467 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer