naa a22 4500 510803237 CHVBK 20180411083405.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2740-7 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2740-7 Investigations of 2.9-GHz Resonant Microwave-Sensitive Ag/MgO/Ge/Ag Tunneling Diodes [Elektronische Daten] [A.F. Qasrawi, H.K. Khanfar] In this work, a resonant microwave-sensitive tunneling diode has been designed and investigated. The device, which is composed of a magnesium oxide (MgO) layer on an amorphous germanium (Ge) thin film, was characterized by means of temperature-dependent current (I)-voltage (V), room-temperature differential resistance (R)-voltage, and capacitance (C)-voltage characteristics. The device resonating signal was also tested and evaluated at 2.9GHz. The I-V curves reflected weak temperature dependence and a wide tunneling region with peak-to-valley current ratio of ∼1.1. The negative differential resistance region shifts toward lower biasing voltages as temperature increases. The true operational limit of the device was determined as 350K. A novel response of the measured R-V and C-V to the incident alternating-current (ac) signal was observed at 300K. Particularly, the response to a 100-MHz signal power ranging from the standard Bluetooth limit to the maximum output power of third-generation mobile phones reflects a wide range of tunability with discrete switching property at particular power limits. In addition, when the tunnel device was implanted as an amplifier for a 2.90-GHz resonating signal of the power of wireless local-area network (LAN) levels, signal gain of 80% with signal quality factor of 4.6×104 was registered. These remarkable properties make devices based on MgO-Ge interfaces suitable as electronic circuit elements for microwave applications, bias- and time-dependent electronic switches, and central processing unit (CPU) clocks. TMS, 2013 Semiconductor devices nationallicence MgO nationallicence Ge thin films nationallicence electrical nationallicence Qasrawi A.F. Department of Physics, Arab-American University, Jenin, Palestine aut Khanfar H.K. Department of Telecommunication Engineering, Arab-American University, Jenin, Palestine aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3451-3457 0361-5235 42:12<3451 2013 42 11664 https://doi.org/10.1007/s11664-013-2740-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2740-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Qasrawi A.F. Department of Physics, Arab-American University, Jenin, Palestine aut NATIONALLICENCE 700 1- Khanfar H.K. Department of Telecommunication Engineering, Arab-American University, Jenin, Palestine aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3451-3457 0361-5235 42:12<3451 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer