naa a22 4500 510803245 CHVBK 20180411083405.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2779-5 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2779-5 Enhanced Thermoelectric Properties of Antimony Telluride Thin Films with Preferred Orientation Prepared by Sputtering a Fan-Shaped Binary Composite Target [Elektronische Daten] [Zhuang-hao Zheng, Ping Fan, Jing-ting Luo, Guang-xing Liang, Dong-ping Zhang] p-Type antimony telluride (Sb2Te3) thermoelectric thin films were deposited on BK7 glass substrates by ion beam sputter deposition using a fan-shaped binary composite target. The deposition temperature was varied from 100°C to 300°C in increments of 50°C. The influence of the deposition temperature on the microstructure, surface morphology, and thermoelectric properties of the thin films was systematically investigated. x-Ray diffraction results show that various alloy composition phases of the Sb2Te3 materials are grown when the deposition temperature is lower than 200°C. Preferred c-axis orientation of the Sb2Te3 thin film became obvious when the deposition temperature was above 200°C, and thin film with single-phase Sb2Te3 was obtained when the deposition temperature was 250°C. Scanning electron microscopy reveals that the average grain size of the films increases with increasing deposition temperature and that the thin film deposited at 250°C shows rhombohedral shape corresponding to the original Sb2Te3 structure. The room-temperature Seebeck coefficient and electrical conductivity range from 101μVK−1 to 161μVK−1 and 0.81×103Scm−1 to 3.91×103Scm−1, respectively, as the deposition temperature is increased from 100°C to 300°C. An optimal power factor of 6.12×10−3Wm−1K−2 is obtained for deposition temperature of 250°C. The thermoelectric properties of Sb2Te3 thin films have been found to be strongly enhanced when prepared using the fan-shaped binary composite target method with an appropriate substrate temperature. TMS, 2013 Thermoelectric thin films nationallicence antimony telluride nationallicence thermoelectric properties nationallicence Zheng Zhuang-hao College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, 518060, Shenzhen, China aut Fan Ping College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, 518060, Shenzhen, China aut Luo Jing-ting College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, 518060, Shenzhen, China aut Liang Guang-xing College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, 518060, Shenzhen, China aut Zhang Dong-ping College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, 518060, Shenzhen, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3421-3425 0361-5235 42:12<3421 2013 42 11664 https://doi.org/10.1007/s11664-013-2779-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2779-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zheng Zhuang-hao College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, 518060, Shenzhen, China aut NATIONALLICENCE 700 1- Fan Ping College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, 518060, Shenzhen, China aut NATIONALLICENCE 700 1- Luo Jing-ting College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, 518060, Shenzhen, China aut NATIONALLICENCE 700 1- Liang Guang-xing College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, 518060, Shenzhen, China aut NATIONALLICENCE 700 1- Zhang Dong-ping College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen University, 518060, Shenzhen, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3421-3425 0361-5235 42:12<3421 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer