naa a22 4500 510803261 CHVBK 20180411083405.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2764-z doi (NATIONALLICENCE)springer-10.1007/s11664-013-2764-z High-Energy-Density Poly(styrene-co-acrylonitrile) Thin Films [Elektronische Daten] [Fei Wen, Zhuo Xu, Weimin Xia, Hongjun Ye, Xiaoyong Wei, Zhicheng Zhang] The dielectric response of poly(styrene-co-acrylonitrile) (PSAN) thin films fabricated by a solution casting process was investigated in this work. Linear dielectric behavior was obtained in PSAN films under an electric field at frequencies from 100Hz to 1MHz and temperature of −50°C to 100°C. The polymer films exhibited an intermediate dielectric permittivity of 4 and low dielectric loss (tanδ) of 0.027. Under 400MV/m, the energy density of the PSAN films was 6.8J/cm3, which is three times higher than that of biaxially oriented polypropylene (BOPP) (about 1.6J/cm3). However, their charge-discharge efficiency (about 90%) was rather close to that of BOPP. The calculated effective dielectric permittivity of the PSAN films under high electric field was as high as 9, which may be attributed to the improved displacement of the cyanide groups (-CN) polarized at high electric fields. These high-performance features make PSAN attractive for high-energy-density capacitor applications. TMS, 2013 Poly(styrene-co-acrylonitrile) nationallicence linear dielectric nationallicence high energy density nationallicence low dielectric loss nationallicence Wen Fei Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Xu Zhuo Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Xia Weimin Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Ye Hongjun Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Wei Xiaoyong Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Zhang Zhicheng Department of Applied Chemistry, School of Science, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3489-3493 0361-5235 42:12<3489 2013 42 11664 https://doi.org/10.1007/s11664-013-2764-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2764-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wen Fei Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Xu Zhuo Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Xia Weimin Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Ye Hongjun Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Wei Xiaoyong Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Zhang Zhicheng Department of Applied Chemistry, School of Science, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3489-3493 0361-5235 42:12<3489 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer