naa a22 4500 51080327X CHVBK 20180411083405.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2715-8 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2715-8 Preparation of Uncapped CdSe x Te1− x Nanocrystals with Strong Near-IR Tunable Absorption [Elektronische Daten] [Shaohua Li, Guolong Tan, James Murowchick, Clarissa Wisner, Nickolas Leventis, Ting Xia, Xiaobo Chen, Zhonghua Peng] Semiconducting nanocrystals with near-infrared (NIR) photosensitivity are appealing materials for application as photodetectors and in medical diagnostics. Herein, we report the preparation of composition-tunable, uncapped CdSe x Te1−x (x=0 to 1) nanocrystals by simple mechanical alloying. The resulting ternary CdSe x Te1−x (x=0.25, 0.5, 0.75) nanocrystals with average sizes smaller than 10nm have zincblende crystal structure, instead of the wurtzite structure commonly obtained by wet chemical routes, and show strong NIR absorption even beyond 1400nm. While a linear relationship between the lattice parameter and the chemical composition (Se/Te ratio) is observed, indicating the formation of homogeneous alloys, the bandgap energy of the three ternary samples is found to be substantially lower than that of binary CdSe or CdTe nanocrystals, and lower than any ternary CdSeTe reported so far. Existence of a small number of tellurium metal defects in the CdSe x Te1−x (x=0.25, 0.5, 0.75) nanocrystals is confirmed by x-ray diffraction and Raman spectroscopy. Both the optical bowing effect and tellurium metal-induced defects of the mechanically alloyed samples are believed to cause the strong NIR photosensitivity. TMS, 2013 Semiconducting nanocrystals nationallicence mechanical alloy nationallicence near-IR absorption nationallicence cadmium selenide telluride nationallicence Li Shaohua Department of Chemistry, University of Missouri-Kansas City, 64110, Kansas City, MO, USA aut Tan Guolong Department of Chemistry, University of Missouri-Kansas City, 64110, Kansas City, MO, USA aut Murowchick James Department of Geosciences, University of Missouri-Kansas City, 64110, Kansas City, MO, USA aut Wisner Clarissa Department of Chemistry, Missouri University of Science & Technology, 65409, Rolla, MO, USA aut Leventis Nickolas Department of Chemistry, Missouri University of Science & Technology, 65409, Rolla, MO, USA aut Xia Ting Department of Chemistry, University of Missouri-Kansas City, 64110, Kansas City, MO, USA aut Chen Xiaobo Department of Chemistry, University of Missouri-Kansas City, 64110, Kansas City, MO, USA aut Peng Zhonghua Department of Chemistry, University of Missouri-Kansas City, 64110, Kansas City, MO, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3373-3378 0361-5235 42:12<3373 2013 42 11664 https://doi.org/10.1007/s11664-013-2715-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2715-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Li Shaohua Department of Chemistry, University of Missouri-Kansas City, 64110, Kansas City, MO, USA aut NATIONALLICENCE 700 1- Tan Guolong Department of Chemistry, University of Missouri-Kansas City, 64110, Kansas City, MO, USA aut NATIONALLICENCE 700 1- Murowchick James Department of Geosciences, University of Missouri-Kansas City, 64110, Kansas City, MO, USA aut NATIONALLICENCE 700 1- Wisner Clarissa Department of Chemistry, Missouri University of Science & Technology, 65409, Rolla, MO, USA aut NATIONALLICENCE 700 1- Leventis Nickolas Department of Chemistry, Missouri University of Science & Technology, 65409, Rolla, MO, USA aut NATIONALLICENCE 700 1- Xia Ting Department of Chemistry, University of Missouri-Kansas City, 64110, Kansas City, MO, USA aut NATIONALLICENCE 700 1- Chen Xiaobo Department of Chemistry, University of Missouri-Kansas City, 64110, Kansas City, MO, USA aut NATIONALLICENCE 700 1- Peng Zhonghua Department of Chemistry, University of Missouri-Kansas City, 64110, Kansas City, MO, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3373-3378 0361-5235 42:12<3373 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer