naa a22 4500 510803288 CHVBK 20180411083405.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2771-0 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2771-0 Design of S-Graded Buffer Layers for Metamorphic ZnS y Se1− y /GaAs (001) Semiconductor Devices [Elektronische Daten] [T. Kujofsa, A. Antony, S. Xhurxhi, F. Obst, D. Sidoti, B. Bertoli, S. Cheruku, J. Correa, P. Rago, E. Suarez, F. Jain, J. Ayers] We present design equations for error function (or "S-graded”) graded buffers for use in accommodating lattice mismatch of heteroepitaxial semiconductor devices. In an S-graded metamorphic buffer layer the composition and lattice mismatch profiles follow a normal cumulative distribution function. Minimum-energy calculations suggest that the S-graded profile may be beneficial for control of defect densities in lattice-mismatched devices because they have several characteristics which enhance the mobility and glide velocities of dislocations, thereby promoting long misfit segments with relatively few threading arms. First, there is a misfit-dislocation-free zone (MDFZ) adjacent to the interface, which avoids dislocation pinning defects associated with substrate defects. Second, there is another MDFZ near the surface, which reduces pinning interactions near the device layer which will be grown on top. Third, there is a large built-in strain in the top MDFZ, which enhances the glide of dislocations to sweep out threading arms. In this paper we present approximate design equations for the widths of the MDFZs, the built-in strain, and the peak misfit dislocation density for a general S-graded semiconductor with diamond or zincblende crystal structure and (001) orientation, and show that these design equations are in fair agreement with detailed numerical energy-minimization calculations for ZnS y Se1−y /GaAs (001) heterostructures. TMS, 2013 Metamorphic buffer nationallicence S-graded nationallicence energy minimization nationallicence ZnSSe/GaAs (001) nationallicence equilibrium strain nationallicence misfit dislocation density nationallicence Kujofsa T. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Antony A. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Xhurxhi S. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Obst F. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Sidoti D. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Bertoli B. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Cheruku S. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Correa J. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Rago P. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Suarez E. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Jain F. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Ayers J. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3408-3420 0361-5235 42:12<3408 2013 42 11664 https://doi.org/10.1007/s11664-013-2771-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2771-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kujofsa T. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Antony A. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Xhurxhi S. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Obst F. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Sidoti D. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Bertoli B. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Cheruku S. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Correa J. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Rago P. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Suarez E. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Jain F. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Ayers J. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3408-3420 0361-5235 42:12<3408 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer