naa a22 4500 510803296 CHVBK 20180411083405.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2717-6 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2717-6 Effects of Inductively Coupled Plasma Hydrogen on Long-Wavelength Infrared HgCdTe Photodiodes [Elektronische Daten] [P. Boieriu, C. Buurma, R. Bommena, C. Blissett, C. Grein, S. Sivananthan] Bulk passivation of semiconductors with hydrogen continues to be investigated for its potential to improve device performance. In this work, hydrogen-only inductively coupled plasma (ICP) was used to incorporate hydrogen into long-wavelength infrared HgCdTe photodiodes grown by molecular-beam epitaxy. Fully fabricated devices exposed to ICP showed statistically significant increases in zero-bias impedance values, improved uniformity, and decreased dark currents. HgCdTe photodiodes on Si substrates passivated with amorphous ZnS exhibited reductions in shunt currents, whereas devices on CdZnTe substrates passivated with polycrystalline CdTe exhibited reduced surface leakage, suggesting that hydrogen passivates defects in bulk HgCdTe and in CdTe. TMS, 2013 Mercury cadmium telluride (HgCdTe) nationallicence molecular beam epitaxy (MBE) nationallicence long-wavelength infrared (LWIR) nationallicence inductively coupled plasma (ICP) nationallicence hydrogen, passivation, silicon nationallicence Boieriu P. EPIR Technologies, Inc., 590 Territorial Drive, Unit B, 60440, Bolingbrook, IL, USA aut Buurma C. EPIR Technologies, Inc., 590 Territorial Drive, Unit B, 60440, Bolingbrook, IL, USA aut Bommena R. EPIR Technologies, Inc., 590 Territorial Drive, Unit B, 60440, Bolingbrook, IL, USA aut Blissett C. EPIR Technologies, Inc., 590 Territorial Drive, Unit B, 60440, Bolingbrook, IL, USA aut Grein C. Physics Department, Microphysics Laboratory, University of Illinois at Chicago, 845W. Taylor St, 60606, Chicago, IL, USA aut Sivananthan S. Physics Department, Microphysics Laboratory, University of Illinois at Chicago, 845W. Taylor St, 60606, Chicago, IL, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3379-3384 0361-5235 42:12<3379 2013 42 11664 https://doi.org/10.1007/s11664-013-2717-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2717-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Boieriu P. EPIR Technologies, Inc., 590 Territorial Drive, Unit B, 60440, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Buurma C. EPIR Technologies, Inc., 590 Territorial Drive, Unit B, 60440, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Bommena R. EPIR Technologies, Inc., 590 Territorial Drive, Unit B, 60440, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Blissett C. EPIR Technologies, Inc., 590 Territorial Drive, Unit B, 60440, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Grein C. Physics Department, Microphysics Laboratory, University of Illinois at Chicago, 845W. Taylor St, 60606, Chicago, IL, USA aut NATIONALLICENCE 700 1- Sivananthan S. Physics Department, Microphysics Laboratory, University of Illinois at Chicago, 845W. Taylor St, 60606, Chicago, IL, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3379-3384 0361-5235 42:12<3379 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer