naa a22 4500 510803318 CHVBK 20180411083405.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2753-2 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2753-2 The Effect of Grain Size and Density on the Thermoelectric Properties of Bi2Te3-PbTe Compounds [Elektronische Daten] [Sejin Yoon, O-Jong Kwon, Seunghyun Ahn, Jae-Yeol Kim, Hyun Koo, Sung-Hwan Bae, Jun-Young Cho, Jin-Sang Kim, Chan Park] The effects of microstructure on thermoelectric properties were investigated in Bi2Te3-PbTe compounds of different grain size and density. Powders of two different sizes [0.1μm to 1μm (micropowder) and <50nm (nanopowder)] were prepared from Bi2Te3-PbTe ingots by ball milling and high-energy ball milling. Three different samples were spark plasma sintered from each powder and the mixture of the two powders. The grain size and relative density of the sintered samples varied from 100nm to a few micrometers and 89.7% to 97.3%, respectively. The dimensionless figure of merit zT of the sample sintered from nanopowder was about 0.50 at 500K, being about 3.3 times larger than that of the sample sintered from micropowder (∼0.15 at 500K), when the relative density of the former and the latter were 89.7% and 97.3%, respectively. The improved thermoelectric performance of the samples may originate from the decrease of the thermal conductivity, which was caused by the decrease of the grain size and the increase of the amount of pores. TMS, 2013 Thermoelectric material nationallicence microstructure nationallicence Bi2Te3-PbTe binary compound nationallicence density nationallicence grain boundary nationallicence Yoon Sejin Department of Materials Science and Engineering, College of Engineering Seoul National University, Daehak-dong, Gwanak-gu, Seoul, Republic of Korea aut Kwon O-Jong LG Chem, Daejeon, Republic of Korea aut Ahn Seunghyun Department of Materials Science and Engineering, College of Engineering Seoul National University, Daehak-dong, Gwanak-gu, Seoul, Republic of Korea aut Kim Jae-Yeol Department of Materials Science and Engineering, College of Engineering Seoul National University, Daehak-dong, Gwanak-gu, Seoul, Republic of Korea aut Koo Hyun Department of Materials Science and Engineering, College of Engineering Seoul National University, Daehak-dong, Gwanak-gu, Seoul, Republic of Korea aut Bae Sung-Hwan Department of Materials Science and Engineering, College of Engineering Seoul National University, Daehak-dong, Gwanak-gu, Seoul, Republic of Korea aut Cho Jun-Young Department of Materials Science and Engineering, College of Engineering Seoul National University, Daehak-dong, Gwanak-gu, Seoul, Republic of Korea aut Kim Jin-Sang Korea Institute of Science and Technology, Wolgok 2-dong, Seongbuk-gu, Seoul, Republic of Korea aut Park Chan Department of Materials Science and Engineering, College of Engineering Seoul National University, Daehak-dong, Gwanak-gu, Seoul, Republic of Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3390-3396 0361-5235 42:12<3390 2013 42 11664 https://doi.org/10.1007/s11664-013-2753-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2753-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yoon Sejin Department of Materials Science and Engineering, College of Engineering Seoul National University, Daehak-dong, Gwanak-gu, Seoul, Republic of Korea aut NATIONALLICENCE 700 1- Kwon O-Jong LG Chem, Daejeon, Republic of Korea aut NATIONALLICENCE 700 1- Ahn Seunghyun Department of Materials Science and Engineering, College of Engineering Seoul National University, Daehak-dong, Gwanak-gu, Seoul, Republic of Korea aut NATIONALLICENCE 700 1- Kim Jae-Yeol Department of Materials Science and Engineering, College of Engineering Seoul National University, Daehak-dong, Gwanak-gu, Seoul, Republic of Korea aut NATIONALLICENCE 700 1- Koo Hyun Department of Materials Science and Engineering, College of Engineering Seoul National University, Daehak-dong, Gwanak-gu, Seoul, Republic of Korea aut NATIONALLICENCE 700 1- Bae Sung-Hwan Department of Materials Science and Engineering, College of Engineering Seoul National University, Daehak-dong, Gwanak-gu, Seoul, Republic of Korea aut NATIONALLICENCE 700 1- Cho Jun-Young Department of Materials Science and Engineering, College of Engineering Seoul National University, Daehak-dong, Gwanak-gu, Seoul, Republic of Korea aut NATIONALLICENCE 700 1- Kim Jin-Sang Korea Institute of Science and Technology, Wolgok 2-dong, Seongbuk-gu, Seoul, Republic of Korea aut NATIONALLICENCE 700 1- Park Chan Department of Materials Science and Engineering, College of Engineering Seoul National University, Daehak-dong, Gwanak-gu, Seoul, Republic of Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3390-3396 0361-5235 42:12<3390 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer