naa a22 4500 510803334 CHVBK 20180411083405.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2774-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2774-x Synthesis and Optical Properties of Si-Rich Nitride Containing Silicon Quantum Dots [Elektronische Daten] [Wugang Liao, Xiangbin Zeng, Xixing Wen, Wenjun Zheng, Wei Yao] Hydrogenated silicon-rich nitride films were deposited by plasma-enhanced chemical vapor deposition using NH3 and SiH4. As-deposited samples were thermally annealed under different conditions in argon ambient. Fourier-transform infrared spectroscopy was carried out to investigate the bonding configurations, and Raman scattering spectroscopy was used to study the microstructures and confirm the presence of Si quantum dots (QDs). We found that a near-stoichiometric silicon nitride matrix was formed after high-temperature processing. When the annealing temperature reached 1100°C, the degree of crystallinity (X c) increased to 51.6% for the 60-min sample compared with 46.1% for the 30-min sample. Red-light and yellow-light emission were obtained from the samples annealed at 1100°C for 30min and 60min, respectively. The emission mechanism is dominated by excitons confined within the Si QDs. The ultra-nanocrystals play an important role in the luminescence blue-shift. We measured the bandgap values from optical absorption studies. The increase of the optical bandgap from 1.80eV to 1.90eV with increase of the annealing temperature from 950°C to 1100°C is ascribed to the silicon clusters and nitride matrix. TMS, 2013 Silicon quantum dots nationallicence silicon nitride nationallicence thermal annealing nationallicence photoluminescence nationallicence optical properties nationallicence Liao Wugang School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut Zeng Xiangbin School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut Wen Xixing School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut Zheng Wenjun School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut Yao Wei Shenzhen Institute of Huazhong University of Science and Technology, 518000, Shenzhen, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3445-3450 0361-5235 42:12<3445 2013 42 11664 https://doi.org/10.1007/s11664-013-2774-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2774-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Liao Wugang School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Zeng Xiangbin School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Wen Xixing School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Zheng Wenjun School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Yao Wei Shenzhen Institute of Huazhong University of Science and Technology, 518000, Shenzhen, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3445-3450 0361-5235 42:12<3445 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer