naa a22 4500 510803342 CHVBK 20180411083405.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2731-8 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2731-8 Influence of Li-B-Si Additions on the Sintering and Microwave Dielectric Properties of Ba-Nd-Ti Ceramics [Elektronische Daten] [Enzhu Li, Shuxin Duan, Shumeng Sun, Hao Li, Yuean Mi, Xiaohua Zhou, Shuren Zhang] Li2O-B2O3-SiO2 (LBS) synthesized via a solid-state reaction process was chosen as a novel sintering aid for tungsten-bronze-type Ba4Nd9.3Ti18O54 (BNT) ceramic. The effects of LBS additions on the sintering behaviors, microstructures, and microwave dielectric properties of the BNT ceramic have been investigated, indicating that LBS addition obviously lowered the sintering temperature of the BNT ceramic without damaging its microwave dielectric properties. BNT ceramic doped with 3wt.% and 4wt.% LBS addition could be well sintered at 975°C and 950°C for 3h and had excellent properties: ε r=65.99, Q×f=4943GHz (f=4.4GHz), τ f=19ppm/°C, and ε r=64.56, Q×f=4929GHz (f=4.3GHz), τ f=11ppm/°C, respectively. TMS, 2013 BaO-Nd2O3-TiO2 nationallicence LTCC nationallicence Li2O-B2O3-SiO2 (LBS) nationallicence microwave dielectric ceramics nationallicence Li Enzhu School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Duan Shuxin School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Sun Shumeng School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Li Hao School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Mi Yuean School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Zhou Xiaohua School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Zhang Shuren School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3519-3523 0361-5235 42:12<3519 2013 42 11664 https://doi.org/10.1007/s11664-013-2731-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2731-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Li Enzhu School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Duan Shuxin School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Sun Shumeng School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Li Hao School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Mi Yuean School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Zhou Xiaohua School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Zhang Shuren School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3519-3523 0361-5235 42:12<3519 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer