naa a22 4500 510803350 CHVBK 20180411083405.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2711-z doi (NATIONALLICENCE)springer-10.1007/s11664-013-2711-z Optimized Cu-Sn Wafer-Level Bonding Using Intermetallic Phase Characterization [Elektronische Daten] [Thi-Thuy Luu, Ani Duan, Knut Aasmundtveit, Nils Hoivik] The objective of this study is to optimize the Cu/Sn solid-liquid interdiffusion process for wafer-level bonding applications. To optimize the temperature profile of the bonding process, the formation of intermetallic compounds (IMCs) which takes place during the bonding process needs to be well understood and characterized. In this study, a simulation model for the development of IMCs and the unreacted remaining Sn thickness as a function of the bonding temperature profile was developed. With this accurate simulation model, we are able to predict the parameters which are critical for bonding process optimization. The initial characterization focuses on a kinetics model of the Cu3Sn thickness growth and the amount of Sn thickness that reacts with Cu to form IMCs. As-plated Cu/Sn samples were annealed using different temperatures (150°C to 300°C) and durations (0min to 320min). The kinetics model is then extracted from the measured thickness of IMCs of the annealed samples. The Author(s), 2013 Intermetallic formation nationallicence SLID bonding nationallicence Cu/Sn bonding nationallicence Pb-free solder nationallicence Luu Thi-Thuy IMST-HiVe, Department of Micro and Nano Systems Technology, Vestfold University College, Raveien 197, Borre, Norway aut Duan Ani IMST-HiVe, Department of Micro and Nano Systems Technology, Vestfold University College, Raveien 197, Borre, Norway aut Aasmundtveit Knut IMST-HiVe, Department of Micro and Nano Systems Technology, Vestfold University College, Raveien 197, Borre, Norway aut Hoivik Nils IMST-HiVe, Department of Micro and Nano Systems Technology, Vestfold University College, Raveien 197, Borre, Norway aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3582-3592 0361-5235 42:12<3582 2013 42 11664 https://doi.org/10.1007/s11664-013-2711-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2711-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Luu Thi-Thuy IMST-HiVe, Department of Micro and Nano Systems Technology, Vestfold University College, Raveien 197, Borre, Norway aut NATIONALLICENCE 700 1- Duan Ani IMST-HiVe, Department of Micro and Nano Systems Technology, Vestfold University College, Raveien 197, Borre, Norway aut NATIONALLICENCE 700 1- Aasmundtveit Knut IMST-HiVe, Department of Micro and Nano Systems Technology, Vestfold University College, Raveien 197, Borre, Norway aut NATIONALLICENCE 700 1- Hoivik Nils IMST-HiVe, Department of Micro and Nano Systems Technology, Vestfold University College, Raveien 197, Borre, Norway aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3582-3592 0361-5235 42:12<3582 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer