naa a22 4500 510803385 CHVBK 20180411083405.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2714-9 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2714-9 New Quaternary Sb-Se-Ge-In Chalcogenide Glasses: Linear and Nonlinear Optical Properties [Elektronische Daten] [Sunanda Sharda, Neha Sharma, Pankaj Sharma, Vineet Sharma] Chalcogenide glasses find extensive applications in infrared (IR) devices and optical communication. Optical parameters of Sb10Se65Ge25−y In y thin films, deposited by the thermal evaporation technique, have been analyzed using ultraviolet-visible-near IR spectroscopy. The transitions in the forbidden gap are indirect. The effect of indium (In) alloying on the nonlinear optical parameters has been studied. A shift in optical absorption edge towards higher wavelength shows that the width of the localized states changes, which affects the optical parameters of the system. The high nonlinearity of these glasses makes them suitable for optical regeneration and Raman amplification. TMS, 2013 Chalcogenides nationallicence thin films nationallicence optical properties nationallicence Sharda Sunanda Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, 173234, Solan, Himachal Pradesh, India aut Sharma Neha Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, 173234, Solan, Himachal Pradesh, India aut Sharma Pankaj Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, 173234, Solan, Himachal Pradesh, India aut Sharma Vineet Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, 173234, Solan, Himachal Pradesh, India aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3367-3372 0361-5235 42:12<3367 2013 42 11664 https://doi.org/10.1007/s11664-013-2714-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2714-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Sharda Sunanda Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, 173234, Solan, Himachal Pradesh, India aut NATIONALLICENCE 700 1- Sharma Neha Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, 173234, Solan, Himachal Pradesh, India aut NATIONALLICENCE 700 1- Sharma Pankaj Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, 173234, Solan, Himachal Pradesh, India aut NATIONALLICENCE 700 1- Sharma Vineet Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, 173234, Solan, Himachal Pradesh, India aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3367-3372 0361-5235 42:12<3367 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer