naa a22 4500 510803407 CHVBK 20180411083405.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2747-0 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2747-0 Low-Temperature Processing of PZT Thick Film by Seeding and High-Energy Ball Milling and Studies on Electrical Properties [Elektronische Daten] [Soma Dutta, A. Jeyaseelan, S. Sruthi] Lead zirconate titanate thick film with molecular formula PbZr0.52Ti0.42O3 (PZT) was prepared by a modified conventional sol-gel method through seeding and high-energy ball milling, resulting in perovskite phase formation at lower temperatures. The ball-milling time was optimized by keeping the seed particle loading (5 wt.%) constant in the sol-gel solution. This methodology helped in reduction of the crystalline phase formation temperature to 300°C, which is much lower than that reported in the literature (450°C). The well-established perovskite phase was confirmed by x-ray diffraction (XRD) analysis. Scanning electron microscopy (SEM) of PZT films revealed uniform and crystalline microstructure. Film prepared by this methodology showed higher spontaneous polarization (2.22 μC/cm2), higher capacitance (1.17 nF), and low leakage current density (18 μA/cm2). The results obtained from ferroelectric characterization showed a strong correlation with the XRD and SEM results. TMS, 2013 PZT thick film nationallicence seeding nationallicence high-energy ball milling nationallicence XRD nationallicence ferroelectric nationallicence Dutta Soma Materials Science Division, National Aerospace Laboratories, Council of Scientific and Industrial Research, 560017, Bangalore, India aut Jeyaseelan A. Materials Science Division, National Aerospace Laboratories, Council of Scientific and Industrial Research, 560017, Bangalore, India aut Sruthi S. Materials Science Division, National Aerospace Laboratories, Council of Scientific and Industrial Research, 560017, Bangalore, India aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3524-3528 0361-5235 42:12<3524 2013 42 11664 https://doi.org/10.1007/s11664-013-2747-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2747-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Dutta Soma Materials Science Division, National Aerospace Laboratories, Council of Scientific and Industrial Research, 560017, Bangalore, India aut NATIONALLICENCE 700 1- Jeyaseelan A. Materials Science Division, National Aerospace Laboratories, Council of Scientific and Industrial Research, 560017, Bangalore, India aut NATIONALLICENCE 700 1- Sruthi S. Materials Science Division, National Aerospace Laboratories, Council of Scientific and Industrial Research, 560017, Bangalore, India aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3524-3528 0361-5235 42:12<3524 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer