naa a22 4500 510803415 CHVBK 20180411083406.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2772-z doi (NATIONALLICENCE)springer-10.1007/s11664-013-2772-z Characterization of High- k Gate Dielectric with Amorphous Nanostructure [Elektronische Daten] [Ali Bahari, Reza Gholipur] In the present study, Zr x La1−x O y amorphous nanostructures were prepared by the sol-gel method such that the Zr atomic fraction (x) ranged from 0% to 70%. An analytical model is described for the dielectric constant (k) of Zr x La1−x O y nanostructures in a metal-oxide-semiconductor (MOS) device. The structure and morphology of Zr x La1−x O y film was studied using x-ray diffraction, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. Elemental qualitative analysis was performed using energy-dispersive x-ray spectra and a map that confirmed the findings. Preliminary information on the influence of thermal annealing on the morphological control of Zr x La1−x O y amorphous nanostructures is presented. The dielectric constant of the crystalline Zr0.5La0.5O y thin film is about 36. Electrical property characterization was performed using a metal-dielectric-semiconductor structure via capacitance-voltage and current density-voltage measurements. TMS, 2013 CMOS nationallicence nanostructures nationallicence high- k dielectric nationallicence sol-gel method nationallicence Bahari Ali Department of Physics, University of Mazandaran, 4741695447, Babolsar, Iran aut Gholipur Reza Department of Physics, University of Mazandaran, 4741695447, Babolsar, Iran aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3529-3540 0361-5235 42:12<3529 2013 42 11664 https://doi.org/10.1007/s11664-013-2772-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2772-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Bahari Ali Department of Physics, University of Mazandaran, 4741695447, Babolsar, Iran aut NATIONALLICENCE 700 1- Gholipur Reza Department of Physics, University of Mazandaran, 4741695447, Babolsar, Iran aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3529-3540 0361-5235 42:12<3529 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer