naa a22 4500 510803423 CHVBK 20180411083406.0 cr unu---uuuuu 180411e20131201xx s 000 0 eng 10.1007/s11664-013-2756-z doi (NATIONALLICENCE)springer-10.1007/s11664-013-2756-z Electrical Conductivity and Dielectric Properties of Se85Te15− x Sb x ( x =0at.%, 2at.%, 4at.%, and 6at.%) Thin Films [Elektronische Daten] [N. Hegab, M. Fadel, I. Yahia, A. Salem, A. Farid] The alternating-current (ac) conductivity and dielectric properties of Se85Te15−x Sb x (x=0at.%, 2at.%, 4at.%, and 6at.%) films are reported in this work. Thin films were deposited by thermal evaporation under base pressure of 10−5Torr. The films were well characterized by x-ray diffraction, differential scanning calorimetry, and energy-dispersive x-ray spectroscopy. The ac conductivity and dielectric properties have been investigated for the studied films in the temperature range from 297K to 333K and over the frequency range from 102Hz to 105Hz. The experimental results indicate that the ac conductivity $$ \sigma_{\rm{ac}} (\omega ) $$ σ ac ( ω ) and the dielectric constant depend on temperature, frequency, and Sb content. The frequency dependence of $$ \sigma_{\rm{ac}} (\omega ) $$ σ ac ( ω ) was found to be linear with a slope lying very close to unity and is independent of temperature. This behavior can be explained in terms of correlated barrier hopping between centers forming intimate valence-alternation pairs. The density of localized states N(E F) at the Fermi level is estimated. The activation energy $$ \Updelta E(\omega ) $$ Δ E ( ω ) was found to decrease with increasing frequency. The dielectric constant ε 1 and dielectric loss ε 2 were found to decrease with increasing frequency and increased with increasing temperature over the ranges studied. The maximum barrier height W m for the studied films was calculated from an analysis of the dielectric loss ε 2 according to the Guintini equation. The values agree with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott for chalcogenide glasses. The variation of the studied properties with Sb content was also investigated. TMS, 2013 Chalcogenide glasses nationallicence amorphous SeTeSb thin films nationallicence ac conductivity nationallicence dielectric constant nationallicence Hegab N. Semiconductor Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt aut Fadel M. Semiconductor Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt aut Yahia I. Semiconductor Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt aut Salem A. Physics Division, Electron Microscopy and Thin Film Laboratory, National Research Center, Dokki, Cairo, Egypt aut Farid A. Semiconductor Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3397-3407 0361-5235 42:12<3397 2013 42 11664 https://doi.org/10.1007/s11664-013-2756-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2756-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Hegab N. Semiconductor Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt aut NATIONALLICENCE 700 1- Fadel M. Semiconductor Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt aut NATIONALLICENCE 700 1- Yahia I. Semiconductor Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt aut NATIONALLICENCE 700 1- Salem A. Physics Division, Electron Microscopy and Thin Film Laboratory, National Research Center, Dokki, Cairo, Egypt aut NATIONALLICENCE 700 1- Farid A. Semiconductor Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/12(2013-12-01), 3397-3407 0361-5235 42:12<3397 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer