naa a22 4500 510803458 CHVBK 20180411083406.0 cr unu---uuuuu 180411e20130301xx s 000 0 eng 10.1007/s11664-012-2353-6 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2353-6 Cu-Cu Hermetic Seal Enhancement Using Self-Assembled Monolayer Passivation [Elektronische Daten] [D. Lim, J. Fan, L. Peng, K. Leong, C. Tan] Low-temperature Cu-Cu thermocompression bonding enabled by self-assembled monolayer (SAM) passivation for hermetic sealing application is investigated in this work. Cavities are etched to a volume of 1.4×10−3cm3 in accordance with the MIL-STD-883E standard prescribed for microelectronics packaging. The wafer pairs (nonfunctional cavity wafer and cap wafer) are annealed and bonded at 250°C under a bonding force of 5500N. The encapsulated cavities undergo helium overpressure in a bombing chamber, and the helium leak rate is detected by a mass spectrometer. The measurement results show that the cavities sealed with Cu-Cu bonding after SAM passivation exhibit excellent hermeticity with a leak rate below 10−9atmcm3/s, which is an improvement of at least 2× compared with the control sample without SAM passivation. TMS, 2012 Cu-Cu bonding nationallicence passivation nationallicence self-assembled monolayer nationallicence alkanethiol nationallicence hermetic nationallicence bonding nationallicence Lim D. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore aut Fan J. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore aut Peng L. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore aut Leong K. GLOBALFOUNDRIES Singapore Pte Ltd, 60 Woodlands Industrial Park D Street 2, 738406, Singapore, Singapore aut Tan C. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/3(2013-03-01), 502-506 0361-5235 42:3<502 2013 42 11664 https://doi.org/10.1007/s11664-012-2353-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2353-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lim D. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore aut NATIONALLICENCE 700 1- Fan J. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore aut NATIONALLICENCE 700 1- Peng L. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore aut NATIONALLICENCE 700 1- Leong K. GLOBALFOUNDRIES Singapore Pte Ltd, 60 Woodlands Industrial Park D Street 2, 738406, Singapore, Singapore aut NATIONALLICENCE 700 1- Tan C. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/3(2013-03-01), 502-506 0361-5235 42:3<502 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer