naa a22 4500 510803474 CHVBK 20180411083406.0 cr unu---uuuuu 180411e20130301xx s 000 0 eng 10.1007/s11664-012-2369-y doi (NATIONALLICENCE)springer-10.1007/s11664-012-2369-y Performance Enhancement of Crystalline Silicon Solar Cells by Coating with Luminescent Silicon Nanostructures [Elektronische Daten] [Tuhin Basu, Mallar Ray, Nil Bandyopadhyay, Ashit Pramanick, Syed Hossain] In this work we report a technique that is potentially capable of increasing the efficiency of crystalline silicon solar cells, which dominate the present-day market of photovoltaic devices. The simple and cost-effective method involves coating the surface of a commercially procured silicon solar cell with luminescent silicon nanocrystals. Core/shell silicon/silicon-oxide nanostructures are fabricated by an inexpensive and reproducible technique, where coarse silicon powders are repeatedly milled, oxidized, and etched until their sizes are reduced so as to exhibit room-temperature photoluminescence under ultraviolet excitation. A thin coating of these nanostructures on a standard solar cell, obtained by a simple dip-coating method, increases the open-circuit voltage and short-circuit current, which consequently increases the maximum power delivered by ~16.3% and efficiency by almost ∼39%. We propose that the core/shell nanostructures act as luminescent convertors that convert higher-energy photons to lower-energy photons, thereby leading to less thermal relaxation loss of photoexcited carriers. TMS, 2012 Core/shell silicon/silicon-oxide nanostructures nationallicence photoluminescence nationallicence luminescent convertors nationallicence solar cell nationallicence Basu Tuhin School of Materials Science and Engineering, Bengal Engineering and Science University, Shibpur, 711103, Howrah, West Bengal, India aut Ray Mallar School of Materials Science and Engineering, Bengal Engineering and Science University, Shibpur, 711103, Howrah, West Bengal, India aut Bandyopadhyay Nil School of Materials Science and Engineering, Bengal Engineering and Science University, Shibpur, 711103, Howrah, West Bengal, India aut Pramanick Ashit Materials Science and Technology Division, National Metallurgical Laboratory, 831007, Jamshedpur, Jharkhand, India aut Hossain Syed Department of Physics, Bengal Engineering and Science University, Shibpur, 711103, Howrah, West Bengal, India aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/3(2013-03-01), 403-409 0361-5235 42:3<403 2013 42 11664 https://doi.org/10.1007/s11664-012-2369-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2369-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Basu Tuhin School of Materials Science and Engineering, Bengal Engineering and Science University, Shibpur, 711103, Howrah, West Bengal, India aut NATIONALLICENCE 700 1- Ray Mallar School of Materials Science and Engineering, Bengal Engineering and Science University, Shibpur, 711103, Howrah, West Bengal, India aut NATIONALLICENCE 700 1- Bandyopadhyay Nil School of Materials Science and Engineering, Bengal Engineering and Science University, Shibpur, 711103, Howrah, West Bengal, India aut NATIONALLICENCE 700 1- Pramanick Ashit Materials Science and Technology Division, National Metallurgical Laboratory, 831007, Jamshedpur, Jharkhand, India aut NATIONALLICENCE 700 1- Hossain Syed Department of Physics, Bengal Engineering and Science University, Shibpur, 711103, Howrah, West Bengal, India aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/3(2013-03-01), 403-409 0361-5235 42:3<403 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer