naa a22 4500 510803490 CHVBK 20180411083406.0 cr unu---uuuuu 180411e20130301xx s 000 0 eng 10.1007/s11664-012-2350-9 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2350-9 Titanium-Based Getter Solution for Wafer-Level MEMS Vacuum Packaging [Elektronische Daten] [Vivek Chidambaram, Xie Ling, Chen Bangtao] Ultrahigh-vacuum conditions can be achieved by employing porous absorbent materials such as Ti, Zr, Ta, and Yt. Commercial getters are primarily Zr-based, since Zr possesses the best adsorption characteristics. Titanium is not considered as a candidate, since adsorption of gases by Ti is significantly reduced due to oxidation and other contamination. In the present work, it is demonstrated that the adsorption property of Ti can be substantially enhanced and benchmarked against other Zr-based commercial getters by employing a sacrificial layer such as Ni over Ti, and also by using other surface engineering techniques. It has been confirmed that, in addition to the activation temperature, the vacuum level during getter activation also plays a pivotal role in influencing the adsorption characteristics of Ti. It has been determined that the getter life could be significantly improved by the reversible adsorption characteristic of H2 gas, facilitating regeneration cycles. TMS, 2012 Vacuum packaging nationallicence getter nationallicence sacrificial layer nationallicence activation nationallicence outgassing nationallicence regeneration cycles nationallicence Chidambaram Vivek Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park II, 117685, Singapore, Singapore aut Ling Xie Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park II, 117685, Singapore, Singapore aut Bangtao Chen Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park II, 117685, Singapore, Singapore aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/3(2013-03-01), 485-491 0361-5235 42:3<485 2013 42 11664 https://doi.org/10.1007/s11664-012-2350-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2350-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chidambaram Vivek Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park II, 117685, Singapore, Singapore aut NATIONALLICENCE 700 1- Ling Xie Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park II, 117685, Singapore, Singapore aut NATIONALLICENCE 700 1- Bangtao Chen Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park II, 117685, Singapore, Singapore aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/3(2013-03-01), 485-491 0361-5235 42:3<485 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer