naa a22 4500 51080358X CHVBK 20180411083406.0 cr unu---uuuuu 180411e20130301xx s 000 0 eng 10.1007/s11664-012-2348-3 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2348-3 Electrical Characteristics of Thin-Film Transistors Fabricated Utilizing a UV/Ozone-Treated TiO2 Channel Layer [Elektronische Daten] [Ho Chong, Tae Kim] Thin-film transistors (TFTs) utilizing TiO2 channel layers were fabricated by using a solution process. Atomic force microscopy images showed that the surface morphology of the TiO2 films became uniform due to the ultraviolet (UV)/ozone treatment. X-ray photoelectron spectroscopy showed that the UV/ozone treatment reduced the amount of oxygen deficiency in the TiO2 films, resulting in a decrease of the electron concentration on the surface. The performance of the TFT devices was significantly improved due to a decrease of the off-current level resulting from the enhanced uniformity and the decrease of the trap level resulting from the UV/ozone treatment. TMS, 2012 Thin-film transistor nationallicence TiO2 channel layer nationallicence structural properties nationallicence electrical characteristics nationallicence Chong Ho Department of Electronics and Computer Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, 133-791, Seoul, Korea aut Kim Tae Department of Electronics and Computer Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, 133-791, Seoul, Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/3(2013-03-01), 398-402 0361-5235 42:3<398 2013 42 11664 https://doi.org/10.1007/s11664-012-2348-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2348-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chong Ho Department of Electronics and Computer Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, 133-791, Seoul, Korea aut NATIONALLICENCE 700 1- Kim Tae Department of Electronics and Computer Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, 133-791, Seoul, Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/3(2013-03-01), 398-402 0361-5235 42:3<398 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer