<?xml version="1.0" encoding="UTF-8"?>
<collection xmlns="http://www.loc.gov/MARC21/slim">
 <record>
  <leader>     naa a22        4500</leader>
  <controlfield tag="001">510803598</controlfield>
  <controlfield tag="003">CHVBK</controlfield>
  <controlfield tag="005">20180411083406.0</controlfield>
  <controlfield tag="007">cr unu---uuuuu</controlfield>
  <controlfield tag="008">180411e20130301xx      s     000 0 eng  </controlfield>
  <datafield tag="024" ind1="7" ind2="0">
   <subfield code="a">10.1007/s11664-012-2352-7</subfield>
   <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="035" ind1=" " ind2=" ">
   <subfield code="a">(NATIONALLICENCE)springer-10.1007/s11664-012-2352-7</subfield>
  </datafield>
  <datafield tag="245" ind1="0" ind2="0">
   <subfield code="a">Enhanced Thermoelectric Properties of (PbTe)0.88(PbS)0.12 Composites by Sb Doping</subfield>
   <subfield code="h">[Elektronische Daten]</subfield>
   <subfield code="c">[J.Q. Li, X.X. Li, F.S. Liu, W.Q. Ao, H.T. Li]</subfield>
  </datafield>
  <datafield tag="520" ind1="3" ind2=" ">
   <subfield code="a">The effects of Sb doping on (PbTe)0.88(PbS)0.12 composites prepared by melting, ball milling, and spark plasma sintering were investigated. The x-ray diffraction results indicate that all samples Sb x Pb1−x Te0.88S0.12 with x = 0, 0.002, 0.004, 0.006 and 0.008 are composites containing PbTe with NaCl-type structure as the major phase and PbS with NaCl-type structure as the minor phase. The electrical resistivity is reduced with increasing Sb doping, from 1.95×10−5Ωm for Sb content x=0 to 5.55×10−6Ωm for x=0.008 at 298K, showing that Sb is an efficient electron donor. However, the absolute Seebeck coefficient decreases, from 196μV/K for x=0 to 57.0μV/K for x=0.008 at 298K, and the thermal conductivity increases, from 0.989W/mK for x=0 to 1.64W/mK for x=0.008, with Sb doping. The power factor and figure of merit ZT can be enhanced by proper Sb doping. The maximum dimensionless figure of merit ZT of 1.20 was obtained in the sample Sb0.004Pb0.996Te0.88S0.12 at 773K.</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
   <subfield code="a">TMS, 2012</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">PbTe/PbS alloys</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">Sb doping</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">thermoelectric property</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Li</subfield>
   <subfield code="D">J.Q.</subfield>
   <subfield code="u">College of Materials Science and Engineering, Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials, 518060, Shenzhen, People's Republic of China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Li</subfield>
   <subfield code="D">X.X.</subfield>
   <subfield code="u">College of Materials Science and Engineering, Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials, 518060, Shenzhen, People's Republic of China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Liu</subfield>
   <subfield code="D">F.S.</subfield>
   <subfield code="u">College of Materials Science and Engineering, Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials, 518060, Shenzhen, People's Republic of China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Ao</subfield>
   <subfield code="D">W.Q.</subfield>
   <subfield code="u">College of Materials Science and Engineering, Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials, 518060, Shenzhen, People's Republic of China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Li</subfield>
   <subfield code="D">H.T.</subfield>
   <subfield code="u">College of Materials Science and Engineering, Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials, 518060, Shenzhen, People's Republic of China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="773" ind1="0" ind2=" ">
   <subfield code="t">Journal of Electronic Materials</subfield>
   <subfield code="d">Springer US; http://www.springer-ny.com</subfield>
   <subfield code="g">42/3(2013-03-01), 366-371</subfield>
   <subfield code="x">0361-5235</subfield>
   <subfield code="q">42:3&lt;366</subfield>
   <subfield code="1">2013</subfield>
   <subfield code="2">42</subfield>
   <subfield code="o">11664</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2="0">
   <subfield code="u">https://doi.org/10.1007/s11664-012-2352-7</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="908" ind1=" " ind2=" ">
   <subfield code="D">1</subfield>
   <subfield code="a">research-article</subfield>
   <subfield code="2">jats</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">856</subfield>
   <subfield code="E">40</subfield>
   <subfield code="u">https://doi.org/10.1007/s11664-012-2352-7</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Li</subfield>
   <subfield code="D">J.Q.</subfield>
   <subfield code="u">College of Materials Science and Engineering, Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials, 518060, Shenzhen, People's Republic of China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Li</subfield>
   <subfield code="D">X.X.</subfield>
   <subfield code="u">College of Materials Science and Engineering, Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials, 518060, Shenzhen, People's Republic of China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Liu</subfield>
   <subfield code="D">F.S.</subfield>
   <subfield code="u">College of Materials Science and Engineering, Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials, 518060, Shenzhen, People's Republic of China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Ao</subfield>
   <subfield code="D">W.Q.</subfield>
   <subfield code="u">College of Materials Science and Engineering, Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials, 518060, Shenzhen, People's Republic of China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Li</subfield>
   <subfield code="D">H.T.</subfield>
   <subfield code="u">College of Materials Science and Engineering, Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials, 518060, Shenzhen, People's Republic of China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">773</subfield>
   <subfield code="E">0-</subfield>
   <subfield code="t">Journal of Electronic Materials</subfield>
   <subfield code="d">Springer US; http://www.springer-ny.com</subfield>
   <subfield code="g">42/3(2013-03-01), 366-371</subfield>
   <subfield code="x">0361-5235</subfield>
   <subfield code="q">42:3&lt;366</subfield>
   <subfield code="1">2013</subfield>
   <subfield code="2">42</subfield>
   <subfield code="o">11664</subfield>
  </datafield>
  <datafield tag="900" ind1=" " ind2="7">
   <subfield code="a">Metadata rights reserved</subfield>
   <subfield code="b">Springer special CC-BY-NC licence</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="898" ind1=" " ind2=" ">
   <subfield code="a">BK010053</subfield>
   <subfield code="b">XK010053</subfield>
   <subfield code="c">XK010000</subfield>
  </datafield>
  <datafield tag="949" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="F">NATIONALLICENCE</subfield>
   <subfield code="b">NL-springer</subfield>
  </datafield>
 </record>
</collection>
