naa a22 4500 51080361X CHVBK 20180411083406.0 cr unu---uuuuu 180411e20130301xx s 000 0 eng 10.1007/s11664-012-2345-6 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2345-6 Diffusion Soldering of Pb-Doped GeTe Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer [Elektronische Daten] [C.L. Yang, H.J. Lai, J.D. Hwang, T.H. Chuang] Directly coating a GeTe(Pb) thermoelectric device with a Ni barrier layer and an Ag reaction layer and then diffusion soldering with a Cu electrode coated with Ag and Sn leads to breakage at the GeTe(Pb)/Ni interface and low bonding strengths of about 6MPa. An improved process, precoating with 1μm Sn film and heating at 250°C for 3min before electroplating with Ni and Ag layers, results in satisfactory bonding strengths ranging from 12.6MPa to 19.1MPa. The precoated Sn film leads to the formation of a (Ni,Ge)3Sn4 layer between the GeTe(Pb) thermoelectric material and Ni barrier layer, reducing the thermal stress at the GeTe(Pb)/Ni interface. TMS, 2012 Diffusion soldering nationallicence GeTe(Pb) thermoelectric modules nationallicence intermetallic compounds nationallicence bonding strength nationallicence Yang C.L. Institute of Materials Science and Engineering, National Taiwan University, 106, Taipei, Taiwan aut Lai H.J. Material and Chemical Research Laboratories, Industrial Technology Research Institute, 31015, Hsinchu, Taiwan aut Hwang J.D. Material and Chemical Research Laboratories, Industrial Technology Research Institute, 31015, Hsinchu, Taiwan aut Chuang T.H. Institute of Materials Science and Engineering, National Taiwan University, 106, Taipei, Taiwan aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/3(2013-03-01), 359-365 0361-5235 42:3<359 2013 42 11664 https://doi.org/10.1007/s11664-012-2345-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2345-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yang C.L. Institute of Materials Science and Engineering, National Taiwan University, 106, Taipei, Taiwan aut NATIONALLICENCE 700 1- Lai H.J. Material and Chemical Research Laboratories, Industrial Technology Research Institute, 31015, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Hwang J.D. Material and Chemical Research Laboratories, Industrial Technology Research Institute, 31015, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Chuang T.H. Institute of Materials Science and Engineering, National Taiwan University, 106, Taipei, Taiwan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/3(2013-03-01), 359-365 0361-5235 42:3<359 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer