naa a22 4500 510803733 CHVBK 20180411083407.0 cr unu---uuuuu 180411e20131001xx s 000 0 eng 10.1007/s11664-013-2690-0 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2690-0 Abnormal Diffusion Behavior of Zn in Cu/Sn-9 wt.%Zn/Cu Interconnects During Liquid-Solid Electromigration [Elektronische Daten] [M. Huang, Q. Zhou, N. Zhao, Z. Zhang] The diffusion behavior of Zn atoms and the interfacial reaction in Cu/Sn-9 wt.%Zn/Cu interconnects undergoing liquid-solid electromigration were investigated under a current density of 5.0×103A/cm2 at 230°C. A reverse polarity effect was revealed, in which the interfacial intermetallic compounds (IMCs) at the cathode grew continuously and were remarkably thicker than those at the anode. This behavior resulted from the directional migration of Zn atoms from the anode towards the cathode, which was induced by the positive effective charge number (Z *) of the Zn atoms rather than by back-stress. Consequently, at the anode, dissolution and massive spalling of the Cu-Zn IMCs occurred, and the depletion of Zn atoms resulted in the transformation of initial interfacial Cu5Zn8 IMC into (Cu6Sn5+CuZn); at the cathode, the interfacial Cu5Zn8 IMC gradually transformed into (Cu5Zn8+CuZn); in the solder, the Zn content reduced continuously from 9wt.% to 0.9wt.%. A growth model is proposed to explain the reverse polarity effect, and the average Z * of Zn atoms in Cu5Zn8 was calculated to be +0.25 using this model. TMS, 2013 Electromigration nationallicence reverse polarity effect nationallicence Cu/Sn-9 wt.%Zn/Cu interconnect nationallicence effective charge number nationallicence interfacial reaction nationallicence intermetallic compound nationallicence Huang M. Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, 116024, Dalian, People's Republic of China aut Zhou Q. Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, 116024, Dalian, People's Republic of China aut Zhao N. Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, 116024, Dalian, People's Republic of China aut Zhang Z. Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, 116024, Dalian, People's Republic of China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2975-2982 0361-5235 42:10<2975 2013 42 11664 https://doi.org/10.1007/s11664-013-2690-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2690-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Huang M. Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, 116024, Dalian, People's Republic of China aut NATIONALLICENCE 700 1- Zhou Q. Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, 116024, Dalian, People's Republic of China aut NATIONALLICENCE 700 1- Zhao N. Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, 116024, Dalian, People's Republic of China aut NATIONALLICENCE 700 1- Zhang Z. Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, 116024, Dalian, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2975-2982 0361-5235 42:10<2975 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer